CMOS Interfacing for Integrated Gas Sensors: A Review

Gardner, Julian W.; Guha, Prasanta Kumar; Udrea, F.; Covington, James A.

doi:10.1109/jsen.2010.2046409

Cited by 188 publications

(90 citation statements)

References 74 publications

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“…6,7 Of these, one of the most common is the chemisresistive sensor, whose relatively simple design and operation make it a strong candidate for CMOS integration. 7,8 The constraints of CMOS are problematic, however, both in terms of permissible materials and processing parameters. Maximum CMOS processing and operating temperatures remain serious barriers to several classic chemisresistive gas sensor topologies.…”

Section: Introductionmentioning

confidence: 99%

“…Maximum CMOS processing and operating temperatures remain serious barriers to several classic chemisresistive gas sensor topologies. 8 These barriers have resulted in a branching of CMOS-gas-sensor integration trends: monolithic; for integration that is compliant with conventional CMOS fabrication rules on a single Si chip, and hybrid; for solutions that require separate chips for the sensor and back end interface circuit. 8 Hybrid solutions require more processing and assembly steps and result in larger, more costly devices.…”

Section: Introductionmentioning

confidence: 99%

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3D integrated monolayer graphene–Si CMOS RF gas sensor platform

et al. 2017

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Integration of a complementary metal-oxide semiconductor (CMOS) and monolayer graphene is a significant step toward realizing low-cost, low-power, heterogeneous nanoelectronic devices based on two-dimensional materials such as gas sensors capable of enabling future mobile sensor networks for the Internet of Things (IoT). But CMOS and post-CMOS process parameters such as temperature and material limits, and the low-power requirements of untethered sensors in general, pose considerable barriers to heterogeneous integration. We demonstrate the first monolithically integrated CMOS-monolayer graphene gas sensor, with a minimal number of post-CMOS processing steps, to realize a gas sensor platform that combines the superior gas sensitivity of monolayer graphene with the low power consumption and cost advantages of a silicon CMOS platform. Mature 0.18 µm CMOS technology provides the driving circuit for directly integrated graphene chemiresistive junctions in a radio frequency (RF) circuit platform. This work provides important advances in scalable and feasible RF gas sensors specifically, and toward monolithic heterogeneous graphene-CMOS integration generally. 1-3 In these cases, power and size requirements are not critical, and such sensors tend to be large and bulky. But with the rapid expansion and prevalence of newer technologies like smart phones, cloud computing and the Internet of Things (IoT), mobile sensors are recognized as an essential component in future ubiquitous sensor networks. 4,5 The goals of IoT sensor networks require mobile and untethered sensors in quantities that negate any realistic possibility of individual sensor maintenance or battery replacement. The expectation is that the sheer number of future sensor devices, the "things" of IoT, will preclude human maintenance of individual nodes within large sensor networks. The implications for future device production are then twofold: the sensors must operate at low-power, and the cost of each device should be low enough that the expected orders of magnitude increase in sensor nodes is feasible. Much of current gas sensor research is therefore directed at the need for low-cost, low-power portable gas sensors, as well as integration with the technology platform best suited to meet that need: silicon complementary metal-oxide semiconductor (CMOS).Solid-state gas sensors cover a wide range of technologies, from microelectromechanical thermal and mass sensors to optical and chemiresistive sensors. 6,7 Of these, one of the most common is the chemisresistive sensor, whose relatively simple design and operation make it a strong candidate for CMOS integration.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

3D integrated monolayer graphene–Si CMOS RF gas sensor platform

et al. 2017

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“…[5][6][7] By integrating MHP gas sensor array with IC on one chip for signal processing and temperature compensation, intelligent gas sensors can be achieved, thus, CMOS-compatible MHP gas sensors are of great interest. [6][7][8][9][10][11] Heaters, free-standing membrane, gas sensing films and electrodes are essential factors for MHP gas sensors. [6][7][8]11 Many CMOS-compatible MHP gas sensors use poly-Si resisters as heaters.…”

Section: Introductionmentioning

confidence: 99%

“…[6][7][8][9][10][11] Heaters, free-standing membrane, gas sensing films and electrodes are essential factors for MHP gas sensors. [6][7][8]11 Many CMOS-compatible MHP gas sensors use poly-Si resisters as heaters. [10][11][12] However, during operating at high temperature for a long time, the resistances drift of poly-Si cause long-term stability problems.…”

Section: Introductionmentioning

confidence: 99%

Design and fabrication of a CMOS-compatible MHP gas sensor

et al. 2014

AIP Advances

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A novel micro-hotplate (MHP) gas sensor is designed and fabricated with a standard CMOS technology followed by post-CMOS processes. The tungsten plugging between the first and the second metal layer in the CMOS processes is designed as zigzag resistor heaters embedded in the membrane. In the post-CMOS processes, the membrane is released by front-side bulk silicon etching, and excellent adiabatic performance of the sensor is obtained. Pt/Ti electrode films are prepared on the MHP before the coating of the SnO2 film, which are promising to present better contact stability compared with Al electrodes. Measurements show that at room temperature in atmosphere, the device has a low power consumption of ∼19 mW and a rapid thermal response of 8 ms for heating up to 300 °C. The tungsten heater exhibits good high temperature stability with a slight fluctuation (<0.3%) in the resistance at an operation temperature of 300 °C under constant heating mode for 336 h, and a satisfactory temperature coefficient of resistance of about 1.9‰/°C.

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“…특히 전도성 고분자 화합물은 물질의 전기적 특성과 변형 및 적용이 쉽고, 가격이 저렴하다는 장점을 가지고 있다. 이러한 이유로 1970년대부터 개발되어 오늘날까지 가스 센서분야뿐만 아니라, 생물학, 의학, 전기전자 분야 등 다양한 분야에 걸쳐 이용되고 있다 [5], [6] . 전도성 고분자 화합물은 대부분 전도도가 우수하며, nm 크기로 공정 제 어가 가능하기 때문에 전기전자분야에 많이 활용되고 있 다.…”

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RF Gas Sensor Using 4-Port Hybrid Coupler with Conducting Polymer

Lee¹,

Kim²,

Lee

et al. 2015

The Journal of Korean Institute of Electromagnetic Engineering

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In this paper, a gas sensor using a modified 90° hybrid coupler structure with conducting polymer which operates at 2.4 GHz is represented. Conducting polymers are used to the gas sensing material in proposed sensors. The conducting polymer varies its electrical property, such as work function and conductivity corresponding to the certain gas. To verify this variation of electrical property of conducting polymer at microwave frequencies, the conducting polymer is incorporated with the 90° hybrid coupler structure, and this proposed sensor operates as reflection type variable attenuator and variable phase shifter. The conducting polymer is employed as impedence-variable transmission lines that cause a impedance mismatching between the general transmission line and conducting polymer. The experiment was conducted with 100 ppm ethanol gas at temperature of 28℃ and relative humidity of 85 %. As a result, the amplitude deviation of   is 0.13 dB and the frequency satisfying ∠   360° is shifted about 2.875 MHz.

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CMOS Interfacing for Integrated Gas Sensors: A Review

Cited by 188 publications

References 74 publications

3D integrated monolayer graphene–Si CMOS RF gas sensor platform

3D integrated monolayer graphene–Si CMOS RF gas sensor platform

Design and fabrication of a CMOS-compatible MHP gas sensor

RF Gas Sensor Using 4-Port Hybrid Coupler with Conducting Polymer

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