CMOS integrated ZnO thin film bulk acoustic resonator with Si3N4 susceptor layer for improved IR sensitivity

Colon-Berrios, Aida R.; Edrees, Hassan; McGinn, Christine K.; Cavallari, Marco Roberto; Kinget, Peter R.; Kymissis, Ioannis

doi:10.1109/drc.2017.7999463

Cited by 4 publications

(1 citation statement)

References 3 publications

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“…Acoustic wave devices, such as surface acoustic waves (SAW) and bulk acoustic waves (BAW), are widely used in gas, temperature, mass, pressure, humidity, bio, magnetic and UV sensors [3][4][5][6][7][8][9][10][11][12][13][14][15]. BAW resonators, such as thin-film bulk acoustic wave resonators (FBAR), offer high sensitivity, high frequency, ppb level detection, label-free sensing capability, CMOS compatibility and small size compared to surface acoustic wave resonators [16][17][18].…”

Section: Introductionmentioning

confidence: 99%

3D FEM Simulation and Analysis of Fractal Electrode-Based FBAR Resonator for Tetrachloroethene (PCE) Gas Detection

Panchal

Varghese

2022

Fractal Fract

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This paper presents the FEM modeling and simulation of a thin-film bulk acoustic resonator (FBAR) for a tetrachloroethene (PCE) gas-sensing application. A zinc oxide layer is used as a piezoelectric material; an aluminum layer is used as the electrode material in the structure of the FBAR. Polyisobutylene (PIB) is used as the sensitive layer for PCE gas detection. The study was carried out in commercially available FEM-based COMSOL software. The proposed structure was exposed to six different organic gases with concentrations ranging from 0 to 1000 ppm. The structure showed high selectivity for PCE gas. Incorporating the 3rd-order Hilbert fractal geometry in the top electrode of the FBAR increased the sensitivity of the sensor which showed high selectivity for PCE gas detection. A sensitivity enhancement of 66% was obtained using fractal geometry on the top electrode of the FBAR without alteration in size or cost. In addition, a reduction in the cross-sensitivity was achieved. Further, the PIB layer thickness and active area of the FBAR were optimized to obtain high sensitivity. The equivalent circuit was also analyzed to understand the behavior of the sensing effect and mechanism.

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