2012
DOI: 10.1109/led.2012.2201689
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CMOS-Integrated Poly-SiGe Piezoresistive Pressure Sensor

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Cited by 24 publications
(4 citation statements)
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“…Together, their small size, high operational frequency, low power consumption, and compatibility with CMOS technology makes them particularly attractive for integrated sensing or microfluidic systems. 22,23 Further, with e-beam lithography on zinc oxide (ZnO) semiconducting films, GHz SAWs with wavelengths close to 1 μm can now be generated. 24 Hence, even though GHz is still far from electromagnetic wave frequencies, the wavelengths now do approach those of electromagnetic waves in air and liquid.…”
Section: Introductionmentioning
confidence: 99%
“…Together, their small size, high operational frequency, low power consumption, and compatibility with CMOS technology makes them particularly attractive for integrated sensing or microfluidic systems. 22,23 Further, with e-beam lithography on zinc oxide (ZnO) semiconducting films, GHz SAWs with wavelengths close to 1 μm can now be generated. 24 Hence, even though GHz is still far from electromagnetic wave frequencies, the wavelengths now do approach those of electromagnetic waves in air and liquid.…”
Section: Introductionmentioning
confidence: 99%
“…Suspended 2D materials with atomicthin layer thickness offer a promising avenue for addressing the challenges associated with achieving ultrathin piezoresistive ma-terials (Table 1) . [223,224] The mechanical sensitivity at the center of the film increases with the square of (a/2) 2 /t, where a is the length of the square membrane and t is its thickness. Thus, a higher value of diameter to thickness ratio corresponds to a greater strain change inside the film for the same differential pressure, which in turn increases the sensitivity of the resistive device.…”
Section: Strain-based Pressure Sensorsmentioning
confidence: 99%
“…Surface acoustic wave (SAW) devices have been used in various sensing applications for measuring the changes in SAW device characteristics such as magnitude or phase shift in frequency response [20]. Several advantageous features such as their smaller size, higher resonant frequency, lower power consumption and better compatibility with CMOS technology makes them an appropriate choice when compared to micro-cantilever and natural clay-modified electrode based sensing systems [21][22][23][24]. Even though different SAW device configurations have been used, since its discovery by Lord Rayleigh in 1885 [25], the use of interdigital electrodes (IDEs) and reflectors by White and Voltmer in 1965 [26] and Staples et al in 1974 [27], respectively has proven to minimize the power dissipation and hence obtain optimized SAW generation and detection.…”
Section: Introductionmentioning
confidence: 99%