2014 IEEE International Reliability Physics Symposium 2014
DOI: 10.1109/irps.2014.6860620
|View full text |Cite
|
Sign up to set email alerts
|

CMOS image sensor: Process impact on dark current

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2
1

Citation Types

0
30
0

Year Published

2017
2017
2023
2023

Publication Types

Select...
5
2
1

Relationship

0
8

Authors

Journals

citations
Cited by 39 publications
(35 citation statements)
references
References 18 publications
0
30
0
Order By: Relevance
“…A dark current is a temperature-dependent common phenomenon that contributes to introduce noise in a sensor's reading and that needs to be considered in calibration tasks, for correction purposes. According to [45], such phenomenon can be generated by the Shockley-Read-Hall (SRH) process-that considers band gap by an impurity in the lattice to [43]): Silicon (Si) is used for acquiring ultraviolet, visible and shortwave NIR regions; indium arsenide (InAs) and gallium arsenide (GaAs) have a spectral response between 900-1700 nm; indium gallium arsenide (InGaAs) extends the previous range to 2600 nm; and mercury cadmium tellurium (MCT or HgCdTe) is characterized by a large spectral range and high quantum efficiency that enables reaching mid-infrared region (about 2500 to 25,000 nm) and NIR region (about 800-2500 nm). CCD and CMOS sensors are different mainly in the way they treat incoming energy.…”
Section: Spectral Information Spatial Informationmentioning
confidence: 99%
See 1 more Smart Citation
“…A dark current is a temperature-dependent common phenomenon that contributes to introduce noise in a sensor's reading and that needs to be considered in calibration tasks, for correction purposes. According to [45], such phenomenon can be generated by the Shockley-Read-Hall (SRH) process-that considers band gap by an impurity in the lattice to [43]): Silicon (Si) is used for acquiring ultraviolet, visible and shortwave NIR regions; indium arsenide (InAs) and gallium arsenide (GaAs) have a spectral response between 900-1700 nm; indium gallium arsenide (InGaAs) extends the previous range to 2600 nm; and mercury cadmium tellurium (MCT or HgCdTe) is characterized by a large spectral range and high quantum efficiency that enables reaching mid-infrared region (about 2500 to 25,000 nm) and NIR region (about 800-2500 nm). CCD and CMOS sensors are different mainly in the way they treat incoming energy.…”
Section: Spectral Information Spatial Informationmentioning
confidence: 99%
“…A dark current is a temperature-dependent common phenomenon that contributes to introduce noise in a sensor's reading and that needs to be considered in calibration tasks, for correction purposes. According to [45], such phenomenon can be generated by the Shockley-Read-Hall (SRH) process-that considers band gap by an impurity in the lattice to make the electron in transition pass through a new energy state-due to multiple factors, which end up resulting in the so-called blemish pixels. Additional information can be found in [15], in which is pointed out that CCD-based sensors have higher sensitivity regarding band data acquisition while, on the other hand, high grade CMOS have greater quantum efficiency in NIR.…”
Section: Spectral Information Spatial Informationmentioning
confidence: 99%
“…Next, some integration scheme can help to reduce the degradation: we have seen the benefits brought by some SiCN layers under the cavity. Another process solution has been proposed in [16] such as increasing the doping of the p+ pinning layer above the photodiode, or increasing the PMD nitride layer conductivity with Si-rich, allowing here a better evacuation or recombination of the UV-generated carriers.…”
Section: Ways To Prevent Plasma Damage On Cmos Image Sensormentioning
confidence: 99%
“…Finally, playing on the photodiode type is also a way to harden the sensor against such damage. For example, it is shown in [16] that p-type pixel collecting holes rather than electrons are much less impacted by such positive PMD nitride charging: this is because the silicon pinning layer is now N-doped, and the positive nitride charges will now re-inforce the electron accumulation. But this p-type pixel will not be immune from negative nitride charging.…”
Section: Ways To Prevent Plasma Damage On Cmos Image Sensormentioning
confidence: 99%
“…It is not caused by incident photons, but is caused by the random generation of electrons and holes in the depleted layer due to defects in the crystalline lattice. The dark current of CMOS sensors is deeper described in [3]. It depends on the sensor sensitivity, temperature and exposure time, but has a relatively static character.…”
Section: A Dark Current Compensationmentioning
confidence: 99%