CMOS I/Q Subharmonic Mixer for Millimeter-Wave Atmospheric Remote Sensing

Parveg, Dristy; Varonen, Mikko; Kangaslahti, Pekka; Safaripour, Amirreza; Hajimiri, Ali; Tikka, Tero; Gaier, T.; Halonen, K.

doi:10.1109/lmwc.2016.2537786

Cited by 21 publications

(5 citation statements)

References 6 publications

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“…Spiral baluns show rather compact, broadband, and low loss performance in the recent CMOS process. 5,12 In this work, a broadside coupler and delay lines are used to design 180 hybrids. A conductive substrate effect is avoided by using two upper top metals as coupled lines.…”

Section: Low Loss 180 Hybrid Designmentioning

confidence: 99%

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86 to 94GHzlow lossCMOSbalanced resistive mixer using an asymmetric broadside coupler and delay lines

Kim

2020

Micro & Optical Tech Letters

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An 86 to 94 GHz balanced resistive mixer (BRM) is presented using a 65 nm complementary metal-oxidesemiconductor (CMOS) process. We minimize parasitic losses which are serious at high frequency by adopting symmetric transistor structures. A low loss 180 hybrid is implemented using an asymmetric broadside coupler and delay lines. This allows low-loss implementation of 86 to 94 GHz BRMs, which represent a conversion loss of 10.3 to 13.0 dB from 86 to 94 GHz of RF frequencies. The balanced designs produce LO-to-RF isolations of 32 to 36 dB from 87 to 93 GHz. The proposed CMOS BRM shows competitive results when compared to GaAs-or InP-based balanced resistive mixers having moderate LO power requirements.

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Section: Low Loss 180 Hybrid Designmentioning

confidence: 99%

“…Reference 10 has used a Lange coupler and a λ/4 line to implement 180° hybrids but it is also not applicable to CMOS process which has lossy substrate. Spiral baluns show rather compact, broadband, and low loss performance in the recent CMOS process 5,12 …”

Section: W‐band Brm Design For Low Conversion Lossmentioning

confidence: 99%

86 to 94GHzlow lossCMOSbalanced resistive mixer using an asymmetric broadside coupler and delay lines

Kim

2020

Micro & Optical Tech Letters

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“…The high frequency RF signal is applied through a shunt spiral inductor (L1/L2) accompanied by a series line (TL1/TL2) to transform the low input impedance of transistor base to a higher value [3]. To do this, custom inductors are designed with one-turn symmetric structure on M6, where the simulated value of each inductor is about 20 pH with the maximum quality factor of 12.9 at 173 GHz, and the self-resonance frequency of 355 GHz.…”

Section: Circuit Topology and Realizationmentioning

confidence: 99%

“…It requires only a fraction of the local oscillator (LO) frequency compared to a fundamental mixer and increases the LO-to-RF isolation significantly. Unfortunately, most of the high frequency SHMs above 100 GHz have relatively conversion loss, which imposes severe noise figure (NF), gain and linearity requirements on the low noise amplifier and following building blocks of receiver chain [2], [3], [4]. On the other hand, to realize a high gain amplifier at the RF or IF side, usually three to five stages are utilized, where it burdens the power budget of a low power system.…”

Section: Introductionmentioning

confidence: 99%

A 100–140 GHz SiGe-BiCMOS sub-harmonic down-converter mixer

Seyedhosseinzadeh

Nabavi

Carpenter

et al. 2017

2017 12th European Microwave Integrated Circuits Conference (EuMIC)

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This paper demonstrates a wideband, subharmonic down converting mixer using a commercial 130-nm SiGe-BiCMOS technology. The mixer adopts a frequency doubling LO-stage, a differential switched-transconductance RFstage, on-chip LO and RF baluns, and two emitter-follower buffer-stages. The measured results exhibit a maximum conversion gain up to 2.6 dB over the frequency range of 100 to 140 GHz with a LO power of 5 dBm. The mixer achieves an input referred 1-dB compression point of-7.2 dBm, with a DC power of 46.3 mW, including 26.7 mW for buffer-stages. It demonstrates also up to 12 GHz 3-dB IF bandwidth, which to the authors' best knowledge, is the highest obtained among active sub-harmonic mixers operating above 100 GHz. The chip occupies 0.4 mm 2 , including pads.

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“…Even though they present superior performance, they have low yield and limited integration capability. Due to recent improvements in silicon based technologies, it is possible to develop millimeter-wave systems in CMOS and SiGe technologies and the performance is competitive with the III-V technologies [2]- [3].…”

Section: Introductionmentioning

confidence: 99%

Design of high-performance E-band SPDT switch and LNA in 0.13 μm SiGe BiCMOS technology

Ahamed

Varonen

Parveg

et al. 2017

2017 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC)

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This paper presents the design of high-performance E-band single-pole double-through (SPDT) switch and low noise amplifier (LNA) as a part of transceiver front-end in an 0.13 µm SiGe BiCMOS technology. The quarter-wave shunt SPDT switch is designed using reverse-saturated SiGe HBTs. The resulting switch exhibits an insertion loss of 2.1 dB, isolation of 26 dB, reflection coefficient better than 18 dB at 75 GHz and provides a bandwidth of more than 35 GHz. The designed switch is integrated with a single-in differential-output (SIDO) low noise amplifier (LNA) and utilized as input matching element of the LNA. The LNA utilizes a common-emitter amplifier at the first stage and a casocode amplifier at the second stage to exploit the advantages of both common-emitter and cascode topologies. The resulting LNA with integrated switch achieves a gain and noise figure(NF) of 26 dB and 6.9 dB, respectively at 75 GHz with a 3 dB bandwidth of 12 GHz. Output referred 1-dB compression point of +5.5 dBm is achieved at 75 GHz. The designed integrated block consumes 45.5 mW of DC power and occupies an area of 720 µm x 580 µm excluding RF pads.

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CMOS I/Q Subharmonic Mixer for Millimeter-Wave Atmospheric Remote Sensing

Cited by 21 publications

References 6 publications

86 to 94GHzlow lossCMOSbalanced resistive mixer using an asymmetric broadside coupler and delay lines

86 to 94GHzlow lossCMOSbalanced resistive mixer using an asymmetric broadside coupler and delay lines

A 100–140 GHz SiGe-BiCMOS sub-harmonic down-converter mixer

Design of high-performance E-band SPDT switch and LNA in 0.13 μm SiGe BiCMOS technology

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