CMOS compatible GaN-on-Si HEMT technology for RF applications: analysis of substrate losses and non-linearities

Yadav, Sachin; Cardinael, P.; Zhao, Ming; Vondkar, Komal; Peralagu, Uthayasankaran; Alian, A.; Khaled, Ahmad; Makovejev, Sergej; Ekoga, Enrique; Lederer, Dimitri; Raskin, Jean‐Pierre; Parvais, B.; Collaert, N.

doi:10.1109/icicdt51558.2021.9626530

Cited by 3 publications

(3 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The use of Si substrates has several advantages, including low cost, large area, and well-established CMOS processing techniques. However, the lattice mismatch between Si and GaN results in high defect density and poor crystalline quality, which leads to low device performance [64][65][66][67][68][69].…”

Section: Gold-free Coms-compatible Gan Technologymentioning

confidence: 99%

“…The development of third-generation semiconductors, including GaN on Si [53][54][55][56][57][58] or silicon carbide (SiC) [28,[59][60][61][62][63], has been a focus of research for more than 20 years. Among these materials, GaN on Si has emerged as a promising alternative to SiC due to its lower cost and CMOS process compatibility [64][65][66][67][68][69]. Despite this advantage, the epitaxy of GaN on Si remains challenging due to the lattice mismatch and thermal expansion coefficient differences between the two materials.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

A Brief Overview of the Rapid Progress and Proposed Improvements in Gallium Nitride Epitaxy and Process for Third-Generation Semiconductors with Wide Bandgap

et al. 2023

View full text Add to dashboard Cite

In this paper, we will discuss the rapid progress of third-generation semiconductors with wide bandgap, with a special focus on the gallium nitride (GaN) on silicon (Si). This architecture has high mass-production potential due to its low cost, larger size, and compatibility with CMOS-fab processes. As a result, several improvements have been proposed in terms of epitaxy structure and high electron mobility transistor (HEMT) process, particularly in the enhancement mode (E-mode). IMEC has made significant strides using a 200 mm 8-inch Qromis Substrate Technology (QST®) substrate for breakdown voltage to achieve 650 V in 2020, which was further improved to 1200 V by superlattice and carbon-doped in 2022. In 2016, IMEC adopted VEECO metal-organic chemical vapor deposition (MOCVD) for GaN on Si HEMT epitaxy structure and the process by implementing a three-layer field plate to improve dynamic on-resistance (RON). In 2019, Panasonic HD-GITs plus field version was utilized to effectively improve dynamic RON. Both reliability and dynamic RON have been enhanced by these improvements.

show abstract

Section: Gold-free Coms-compatible Gan Technologymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A Brief Overview of the Rapid Progress and Proposed Improvements in Gallium Nitride Epitaxy and Process for Third-Generation Semiconductors with Wide Bandgap

et al. 2023

View full text Add to dashboard Cite

show abstract

“…4) [13,14]. The work in [15,16] provides further insight into the substrate-related RF losses and nonlinearities for these GaN HEMTs on Si.…”

Section: The Gan Hemt Devicesmentioning

confidence: 99%

RF linearity trade-offs for varying T-gate geometries of GaN HEMTs on Si

ElKashlan

Khaled

Rodríguez

et al. 2023

Int. J. Microw. Wireless Technol.

Self Cite

View full text Add to dashboard Cite

Short-channel Gallium Nitride (GaN) high-electron-mobility transistors (HEMTs) often utilize T-shape gates due to their large gate-line cross-sectional area and subsequent fMAX increase. In this paper, we report the linearity trade-offs associated with varying the T-gate geometries of AlGaN/GaN HEMTs on Si, specifically the gate extensions which serve as field plates and their impact on the large-signal performance. Small-signal characterization and modeling, in addition to TCAD, provide initial guidelines for the optimal dimensions for the gate field plates using the ratio of fT and the product of the gate resistance and the gate-to-drain capacitance. We utilize various characterization methods, including 6 GHz non-linear vector network analyzer characterization in addition to load-pull, to quantify the amplitude and phase distortion and their subsequent impact on the large-signal metrics of the devices under differing matching conditions and bias points. We deduce that the influence of the gate field plates on the amplitude and phase distortion is non-negligible, particularly under matched conditions.

show abstract

Quasi-Physical Equivalent Circuit Model of RF Leakage Current in Substrate Including Temperature Dependence for GaN-HEMT on Si

Yamaguchi

Oishi

2023

IEEE Trans. Microwave Theory Techn.

View full text Add to dashboard Cite

CMOS compatible GaN-on-Si HEMT technology for RF applications: analysis of substrate losses and non-linearities

Cited by 3 publications

References 17 publications

A Brief Overview of the Rapid Progress and Proposed Improvements in Gallium Nitride Epitaxy and Process for Third-Generation Semiconductors with Wide Bandgap

A Brief Overview of the Rapid Progress and Proposed Improvements in Gallium Nitride Epitaxy and Process for Third-Generation Semiconductors with Wide Bandgap

RF linearity trade-offs for varying T-gate geometries of GaN HEMTs on Si

Quasi-Physical Equivalent Circuit Model of RF Leakage Current in Substrate Including Temperature Dependence for GaN-HEMT on Si

Contact Info

Product

Resources

About