CMOS-compatible GaN-on-Si field-effect transistors for high voltage power applications

Kwan, Man Ho; Wong, King-Yuen; Lin, Yaojun; Yao, F.-W.; Tsai, Min-Hsuan; Chang, Yi-Feng; Chen, P. C.; Su, R.Y.; Wu, Chia‐Ju; Yu, Jingshu; Yang, Fei; Lansbergen, G. P.; Wu, Haifu; Lin, Ming-Chieh; Wu, Chunlei; Lai, Yi-De; Hsiung, C.-W.; Liu, P.-C.; Chiu, H. C.; Chen, C.-M.; Yu, Chan-Hun; Lin, Hong-Cheng; Chang, Ming Hsung; Wang, S.-P.; Chen, L. C.; Tsai, Jhen-Yu; Tuan, H.C.; Kalnitsky, A.

doi:10.1109/iedm.2014.7047073

Cited by 17 publications

(5 citation statements)

References 9 publications

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“…The use of Si substrates has several advantages, including low cost, large area, and well-established CMOS processing techniques. However, the lattice mismatch between Si and GaN results in high defect density and poor crystalline quality, which leads to low device performance [64][65][66][67][68][69].…”

Section: Gold-free Coms-compatible Gan Technologymentioning

confidence: 99%

“…The development of third-generation semiconductors, including GaN on Si [53][54][55][56][57][58] or silicon carbide (SiC) [28,[59][60][61][62][63], has been a focus of research for more than 20 years. Among these materials, GaN on Si has emerged as a promising alternative to SiC due to its lower cost and CMOS process compatibility [64][65][66][67][68][69]. Despite this advantage, the epitaxy of GaN on Si remains challenging due to the lattice mismatch and thermal expansion coefficient differences between the two materials.…”

Section: Introductionmentioning

confidence: 99%

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A Brief Overview of the Rapid Progress and Proposed Improvements in Gallium Nitride Epitaxy and Process for Third-Generation Semiconductors with Wide Bandgap

et al. 2023

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In this paper, we will discuss the rapid progress of third-generation semiconductors with wide bandgap, with a special focus on the gallium nitride (GaN) on silicon (Si). This architecture has high mass-production potential due to its low cost, larger size, and compatibility with CMOS-fab processes. As a result, several improvements have been proposed in terms of epitaxy structure and high electron mobility transistor (HEMT) process, particularly in the enhancement mode (E-mode). IMEC has made significant strides using a 200 mm 8-inch Qromis Substrate Technology (QST®) substrate for breakdown voltage to achieve 650 V in 2020, which was further improved to 1200 V by superlattice and carbon-doped in 2022. In 2016, IMEC adopted VEECO metal-organic chemical vapor deposition (MOCVD) for GaN on Si HEMT epitaxy structure and the process by implementing a three-layer field plate to improve dynamic on-resistance (RON). In 2019, Panasonic HD-GITs plus field version was utilized to effectively improve dynamic RON. Both reliability and dynamic RON have been enhanced by these improvements.

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Section: Gold-free Coms-compatible Gan Technologymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A Brief Overview of the Rapid Progress and Proposed Improvements in Gallium Nitride Epitaxy and Process for Third-Generation Semiconductors with Wide Bandgap

et al. 2023

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“…Then, the evolution of the Au-free process flow for CMOS-compatible GaN technology will be illustrated. We will also discuss the new developments in structures and materials used in CMOS-compatible manufacturing processes in ohmic contact formation and gate structures [ 44 , 45 ].…”

Section: Introductionmentioning

confidence: 99%

The Evolution of Manufacturing Technology for GaN Electronic Devices

Liu

Langpoklakpam

et al. 2021

Micromachines

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GaN has been widely used to develop devices for high-power and high-frequency applications owing to its higher breakdown voltage and high electron saturation velocity. The GaN HEMT radio frequency (RF) power amplifier is the first commercialized product which is fabricated using the conventional Au-based III–V device manufacturing process. In recent years, owing to the increased applications in power electronics, and expanded applications in RF and millimeter-wave (mmW) power amplifiers for 5G mobile communications, the development of high-volume production techniques derived from CMOS technology for GaN electronic devices has become highly demanded. In this article, we will review the history and principles of each unit process for conventional HEMT technology with Au-based metallization schemes, including epitaxy, ohmic contact, and Schottky metal gate technology. The evolution and status of CMOS-compatible Au-less process technology will then be described and discussed. In particular, novel process techniques such as regrown ohmic layers and metal–insulator–semiconductor (MIS) gates are illustrated. New enhancement-mode device technology based on the p-GaN gate is also reviewed. The vertical GaN device is a new direction of development for devices used in high-power applications, and we will also highlight the key features of such kind of device technology.

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“…Several technologies have been developed to achieve normally-off operation, including recessed gate, fluorine-base plasma treatment, floating charges, the piezo neutralization layer, and the p-type GaN cap layer [5][6][7][8][9]. Among these different methods, the p-GaN gate structure is considered to be the most promising structure for commercialization due to its well-balanced features between device performance, reliability and manufacturing capability [10,11].…”

Section: Introductionmentioning

confidence: 99%

Effects of gate work function on E-mode AlGaN/GaN HEMTs with stack gate β-Ga₂O₃/p-GaN structure

Zhu

et al. 2021

J. Phys. D: Appl. Phys.

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This research investigates electrical properties of E-mode AlGaN/GaN HEMTs with n-type β-Ga2O3/p-GaN gate stack under different gate work functions of 4.6, 5.1 and 5.7 eV, respectively. The simulated results show that the device with gate work function of 5.7 eV exhibits the largest threshold voltage of 2.8 V while having the lowest saturation drain current of 0.15 A mm−1, which can be ascribed to the device having the highest Schottky barrier, leading to the least electrons collected at the AlGaN/GaN interface. Moreover, the device with gate work function of 5.7 eV shows the largest gate breakdown voltage as well as the lowest off-state gate leakage, which can be attributed to the least strength of electric field in the Ga2O3 layer. Additionally, the Fowler–Nordheim equation was used to study the mechanisms of off-state leakage.

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CMOS-compatible GaN-on-Si field-effect transistors for high voltage power applications

Cited by 17 publications

References 9 publications

A Brief Overview of the Rapid Progress and Proposed Improvements in Gallium Nitride Epitaxy and Process for Third-Generation Semiconductors with Wide Bandgap

A Brief Overview of the Rapid Progress and Proposed Improvements in Gallium Nitride Epitaxy and Process for Third-Generation Semiconductors with Wide Bandgap

The Evolution of Manufacturing Technology for GaN Electronic Devices

Effects of gate work function on E-mode AlGaN/GaN HEMTs with stack gate β-Ga₂O₃/p-GaN structure

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CMOS-compatible GaN-on-Si field-effect transistors for high voltage power applications

Cited by 17 publications

References 9 publications

A Brief Overview of the Rapid Progress and Proposed Improvements in Gallium Nitride Epitaxy and Process for Third-Generation Semiconductors with Wide Bandgap

A Brief Overview of the Rapid Progress and Proposed Improvements in Gallium Nitride Epitaxy and Process for Third-Generation Semiconductors with Wide Bandgap

The Evolution of Manufacturing Technology for GaN Electronic Devices

Effects of gate work function on E-mode AlGaN/GaN HEMTs with stack gate β-Ga2O3/p-GaN structure

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Product

Resources

About

Effects of gate work function on E-mode AlGaN/GaN HEMTs with stack gate β-Ga₂O₃/p-GaN structure