2017
DOI: 10.1016/j.mssp.2017.05.021
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CMOS- compatible fabrication method of graphene-based micro devices

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Cited by 17 publications
(8 citation statements)
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“…Detailed parameters of photolithography process can be found in Ref. 26 . We chose rather large size of the squares to provide a high signal-to-noise ratio in the latter measurements.…”
Section: Structural Characterization Of Both Samples Was Performed By...mentioning
confidence: 99%
“…Detailed parameters of photolithography process can be found in Ref. 26 . We chose rather large size of the squares to provide a high signal-to-noise ratio in the latter measurements.…”
Section: Structural Characterization Of Both Samples Was Performed By...mentioning
confidence: 99%
“…For SW excitation a coplanar waveguide (CPW) made from Cu(150 nm)/Al(10 nm) with a 2 µm wide signal line was fabricated on top of the structure using direct laser lithography and a lift-off technique 30 . The CPW lines are aligned along the NWs axis to excite a dynamic magnetic field with a component perpendicular to the array (x-axis).…”
Section: A Sample Preparationmentioning
confidence: 99%
“…[ 8,9 ] Compared with conventional semiconductor materials, such as AlGaN, [ 10 ] Si, [ 11 ] Ge, [ 12 ] GaAs, [ 13 ] and PdS, [ 14 ] graphene has ultra‐broadband absorption, because the intrinsic generation of hot carriers could break the bandwidth confinement of photodetection, showing broadband response from visible to infrared regions. [ 15 ] Recently, wafer‐scale fabrication of graphene has been realized [ 16 ] with a production cost lower than that of conventional III–V semiconductors, in which the later are generally grown by expensive and sophisticated epitaxial equipments. [ 17 ] Unlike some traditional semiconductor materials which contain hazardous elements, such as As and Pd, [ 18 ] graphene is environmentally friendly.…”
Section: Introductionmentioning
confidence: 99%