CMOS-compatible direct laser writing of sulfur-ultrahyperdoped silicon: Breakthrough pre-requisite for UV-THz optoelectronic nano/microintegration

Kudryashov, S. I.; Nastulyavichus, Alena; Krasin, George; Khamidullin, Kamil; Болдырев, К. Н.; Kirilenko, D. A.; Yachmenev, A. E.; Пономарев, Д. С.; Komandin, G. A.; Лебедев, С. П.; Prikhodko, D. D.; Kovalev, M. S.

doi:10.1016/j.optlastec.2022.108873

Cited by 6 publications

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“…Thus, this results also correlate with Figure 5 b. Conversely, an increase in the modulation amplitude in the case of the ns-laser processing corresponds to a decrease in the absorption coefficient k and some atomic irregularities ( Figure 4 b). In addition, at wavenumbers of ~450 cm −1 (Si-O rocking), ~800 cm −1 (Si-O bending), ~1075 cm −1 (Si-O stretching), a decrease in reflection was not observed, which indicates an insignificant contribution of the formed surface oxide to the absorption of IR radiation [ 3 ]. The minimum values of the reflection coefficient were 7.3% at wavenumber 6164 cm −1 (1.6 μm) and 26.7% at wavenumber 1682.2 cm −1 (5.9 μm) for the ns- and ps-laser processing, respectively.…”

Section: Resultsmentioning

confidence: 99%

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Au-Hyperdoped Si Nanolayer: Laser Processing Techniques and Corresponding Material Properties

et al. 2023

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The absorption of light in the near-infrared region of the electromagnetic spectrum by Au-hyperdoped Si has been observed. While silicon photodetectors in this range are currently being produced, their efficiency is low. Here, using the nanosecond and picosecond laser hyperdoping of thin amorphous Si films, their compositional (energy-dispersion X-ray spectroscopy), chemical (X-ray photoelectron spectroscopy), structural (Raman spectroscopy) and IR spectroscopic characterization, we comparatively demonstrated a few promising regimes of laser-based silicon hyperdoping with gold. Our results indicate that the optimal efficiency of impurity-hyperdoped Si materials has yet to be achieved, and we discuss these opportunities in light of our results.

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Section: Resultsmentioning

confidence: 99%

“…Silicon hyperdoping is intensively studied to extend the IR response for diverse optoelectronic applications [ 1 , 2 , 3 ]. At present, the hyperdoping of Si ( Figure 1 ) could be achieved by ion implantation and laser processing [ 4 , 5 ], enabling the management of impurity concentration and distribution.…”

Section: Introductionmentioning

confidence: 99%