2011
DOI: 10.1109/jmems.2011.2167661
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CMOS-Based High-Density Silicon Microprobe Arrays for Electronic Depth Control in Intracortical Neural Recording

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Cited by 69 publications
(78 citation statements)
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“…The 180-μ m-wide, 80-μ m-thick, 4-mm-long, 19 ° tip angle penetrating shaft of the EDC device was realized using deep reactive ion etching (DRIE) of silicon [17]. The shaft is populated with 188 recording sites in two columns with an equal horizontal and vertical center pitch of 40 μ m. The 20-μ m-diameter recording sites were plated with Pt, measuring about 1 MOhm impedance at 1 kHz.…”
Section: Electronic Depth Control Devicementioning
confidence: 99%
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“…The 180-μ m-wide, 80-μ m-thick, 4-mm-long, 19 ° tip angle penetrating shaft of the EDC device was realized using deep reactive ion etching (DRIE) of silicon [17]. The shaft is populated with 188 recording sites in two columns with an equal horizontal and vertical center pitch of 40 μ m. The 20-μ m-diameter recording sites were plated with Pt, measuring about 1 MOhm impedance at 1 kHz.…”
Section: Electronic Depth Control Devicementioning
confidence: 99%
“…The shaft is populated with 188 recording sites in two columns with an equal horizontal and vertical center pitch of 40 μ m. The 20-μ m-diameter recording sites were plated with Pt, measuring about 1 MOhm impedance at 1 kHz. Each recording site can be connected internally to one of the eight output lines of the probe, and these output lines can be connected in turn to an outside amplifier [18,19]. The connection matrix, switching electronics, control, and input and output lines were integrated on the shaft of the probe, implemented by the 0.6-μ m CMOS process XC06 (X-FAB Semiconductor Foundries AG, Erfurt, Germany).…”
Section: Electronic Depth Control Devicementioning
confidence: 99%
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