Abstract:Magnetic field sensors based on the giant magnetoresistance (GMR) effect have a number of practical current and future applications. We report on a modeling of the magnetoresistive response of moving spin-valve (SV) GMR sensors combined in certain cluster networks to an inhomogeneous magnetic field of a label. We predicted a large variety of sensor responses dependent on the number of sensors in the cluster, their types of interconnections, the orientation of the cluster, and the trajectory of sensor motion re… Show more
“…Magnetic sensors (including MR sensors) have been widely applied in position sensing, current sensing, and non-destructive monitoring (Figure 11) [140][141][142][143][144][145][146][147][148][149][150]. In these applications, magnetic sensors are applied to detect the magnetic fields generated by the targets.…”
Section: Mr Sensors In Position Sensing Current Sensing and Non-destructive Monitoringmentioning
Magnetoresistance (MR) is the variation of a material’s resistivity under the presence of external magnetic fields. Reading heads in hard disk drives (HDDs) are the most common applications of MR sensors. Since the discovery of giant magnetoresistance (GMR) in the 1980s and the application of GMR reading heads in the 1990s, the MR sensors lead to the rapid developments of the HDDs’ storage capacity. Nowadays, MR sensors are employed in magnetic storage, position sensing, current sensing, non-destructive monitoring, and biomedical sensing systems. MR sensors are used to transfer the variation of the target magnetic fields to other signals such as resistance change. This review illustrates the progress of developing nanoconstructed MR materials/structures. Meanwhile, it offers an overview of current trends regarding the applications of MR sensors. In addition, the challenges in designing/developing MR sensors with enhanced performance and cost-efficiency are discussed in this review.
“…Magnetic sensors (including MR sensors) have been widely applied in position sensing, current sensing, and non-destructive monitoring (Figure 11) [140][141][142][143][144][145][146][147][148][149][150]. In these applications, magnetic sensors are applied to detect the magnetic fields generated by the targets.…”
Section: Mr Sensors In Position Sensing Current Sensing and Non-destructive Monitoringmentioning
Magnetoresistance (MR) is the variation of a material’s resistivity under the presence of external magnetic fields. Reading heads in hard disk drives (HDDs) are the most common applications of MR sensors. Since the discovery of giant magnetoresistance (GMR) in the 1980s and the application of GMR reading heads in the 1990s, the MR sensors lead to the rapid developments of the HDDs’ storage capacity. Nowadays, MR sensors are employed in magnetic storage, position sensing, current sensing, non-destructive monitoring, and biomedical sensing systems. MR sensors are used to transfer the variation of the target magnetic fields to other signals such as resistance change. This review illustrates the progress of developing nanoconstructed MR materials/structures. Meanwhile, it offers an overview of current trends regarding the applications of MR sensors. In addition, the challenges in designing/developing MR sensors with enhanced performance and cost-efficiency are discussed in this review.
The discovery of the giant magnetoresistance effect has led to the rapid development of spintronics. Although the half-metals can provide a 100% spin polarization rate and significantly improved giant magnetoresistance, the materials with low Curie temperatures present challenges for their use at room temperature. In an attempt to identify the half-metallic material with high Curie temperatures for spintronics, this study investigates a van der Waals heterostructure with vertically integrated FeCl2/WSe2/FeCl2. The spin-polarized transport properties of the device based on the heterostructure studied by the density function theory combined with nonequilibrium Green's function reveal comprehensive spintronics functions, including giant magnetoresistance, spin filtering, and negative differential resistance effect. The mechanism of the negative differential resistance effect has further been elucidated by the band alignment of the heterostructure under different biases within the bias window.
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