Clusters of Radiation Defects in Silicon with Dislocations

Kazakevich, L. A.; Kuznetsov, Victor P.; Lugakov, P. F.

doi:10.1515/9783112472903-009

Search citation statements

Order By: Relevance

Paper Sections

Select...

Methods Of Increasing Semiconductor Materials Radiation Hard...1

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2001

Publication Types

Select...

Article1

Relationship

Self Cite0

Independent1

Authors

Journals

Cited by 1 publication

(1 citation statement)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Dislocations, free from the impurity atmospheres, are also capable to interact efficiently with radiation defects [6,7]. At density 10 6 ñm -2 the dislocations in Si create deformation fields, under the influence of which vacancies and interstitial atoms generated by irradiation can migrate.…”

Section: Methods Of Increasing Semiconductor Materials Radiation Hard...mentioning

confidence: 99%

Influence of preliminary irradiation on radiation hardness of silicon and indium antimonide

Litovchenko¹

2001

Semicond. Phys. Quantum Electron. Optoelectron.

View full text Add to dashboard Cite

Radiation hardness of semiconductor detectors based on silicon is, first of all, determined by an introduction rate of point defects and aggregation of defect clusters. So introduction of electrically inactive impurity of oxygen promotes taking a vacancy stream aside from a doping impurity of phosphorus. Thus, in spite of the greater capture radius of vacancies by phosphorus atoms, high concentration of oxygen will suppress formation of Ecentres. Use of neutron transmutation doping method allows to receive silicon with enhanced radiation hardness. The preliminary irradiation with neutrons or charged particles with subsequent annealing also allows to increase radiation hardness of material. It is due to introduction into the volume of material some additional sinks for primary radiation defects that causes enhanced radiation hardness of such material.

show abstract

Section: Methods Of Increasing Semiconductor Materials Radiation Hard...mentioning

confidence: 99%

Influence of preliminary irradiation on radiation hardness of silicon and indium antimonide

Litovchenko¹

2001

Semicond. Phys. Quantum Electron. Optoelectron.

View full text Add to dashboard Cite

show abstract

Clusters of Radiation Defects in Silicon with Dislocations

Cited by 1 publication

References 0 publications

Influence of preliminary irradiation on radiation hardness of silicon and indium antimonide

Influence of preliminary irradiation on radiation hardness of silicon and indium antimonide

Contact Info

Product

Resources

About