Clusters Of Atoms Of Copper And Irridium And Their Influence On Recombination Properties Of Silicon

Abstract

The types and nature of structural defects of n-type silicon with clusters of impurity atoms of copper and iridium were determined by the method of non-stationary capacitive spectroscopy (DLTS), measurements of the resistivity, concentration and lifetime of charge carriers, as well as using infrared and atomic force microscopes Solver-NEXT. It was found that after hightemperature diffusion, star-shaped defects are observed in rapidly cooled Si <Cu> samples, while in rapidly cooled Si <Ir> samples they are subsequently embedded in a chain and in the form of a needle, and in both slowly cooled samples, only roundshaped inclusions are formed, however, the density is low. The absence of dislocation decoration in slowly cooled Si <Cu> and Si <Ir> samples is associated with the formation of point defects of the [Cu -O] type, [Cu -Si] silicides, and pairs of Cui [Cus -Cui] and Iri [Irs -Iri] atoms. An increase in the lifetime of charge carriers caused by the formation of an adhesion level associated with the [Cu -O] complex in silicon.