“…Magnetogranular structure consists of a nonmagnetic matrix and ferromagnetic nanoparticles. Metals, semiconductors and dielectrics can be used as matrix materials [17][18][19][20][21][22][23].…”
An analytical review devoted to the physicochemical principles of the synthesis of granular structures in semiconductor-ferromagnet systems is represented. In these systems, as semiconductors, compounds are A II B IV C V 2 , A III C V , A II 2 C V 3 and A II C V 2 and manganese compounds (MnP, MnAs and MnSb) as ferromagnets. It is shown that in magnetostransmitter devices magnetogranular structures are an alternative to superlattices, and the effects of GMR and TMR are also possible. Advantages of magneto-granular structures are considered, such as: less labor-intensive methods of production, milder requirements for the dimension of a ferromagnet and a nonmagnet, the possibility of forming a stable interface, soft requirements to the thickness of layers than in the case of superlattices, etc. It is shown that, due to the high mobility of charge carriers, the use of semiconductors as a matrix is more preferable than metals or dielectrics. The basic principles for the creation of granular structures with high values of magnetoresistance based on eutectic-type systems are formulated. During the crystallization of the eutectic, the simultaneous crystallization of all the phases that make up the eutectic takes place, leading to the formation of a specific fine-dispersed structure. The use of ultrahigh supersaturations leads to significant supercooling, which contributes to metastable crystallization. This causes a synergistic effect that stimulates nanostructuring, and promotes the creation of granular structures. The results of investigations of semiconductor-ferromagnet systems are presented and the possibility of obtaining magnetogranular structures with high magnetoresistance in them is shown.
“…Magnetogranular structure consists of a nonmagnetic matrix and ferromagnetic nanoparticles. Metals, semiconductors and dielectrics can be used as matrix materials [17][18][19][20][21][22][23].…”
An analytical review devoted to the physicochemical principles of the synthesis of granular structures in semiconductor-ferromagnet systems is represented. In these systems, as semiconductors, compounds are A II B IV C V 2 , A III C V , A II 2 C V 3 and A II C V 2 and manganese compounds (MnP, MnAs and MnSb) as ferromagnets. It is shown that in magnetostransmitter devices magnetogranular structures are an alternative to superlattices, and the effects of GMR and TMR are also possible. Advantages of magneto-granular structures are considered, such as: less labor-intensive methods of production, milder requirements for the dimension of a ferromagnet and a nonmagnet, the possibility of forming a stable interface, soft requirements to the thickness of layers than in the case of superlattices, etc. It is shown that, due to the high mobility of charge carriers, the use of semiconductors as a matrix is more preferable than metals or dielectrics. The basic principles for the creation of granular structures with high values of magnetoresistance based on eutectic-type systems are formulated. During the crystallization of the eutectic, the simultaneous crystallization of all the phases that make up the eutectic takes place, leading to the formation of a specific fine-dispersed structure. The use of ultrahigh supersaturations leads to significant supercooling, which contributes to metastable crystallization. This causes a synergistic effect that stimulates nanostructuring, and promotes the creation of granular structures. The results of investigations of semiconductor-ferromagnet systems are presented and the possibility of obtaining magnetogranular structures with high magnetoresistance in them is shown.
“…Upon a further increase of concentration of dopant, a formation of separate crystal phases, namely, MnSb ( T C bulk = 587 K) and/or Mn 2 Sb ( T C bulk, hexagonal = 363 K, T C bulk, tetragonal = 546–550 K), can occur . Those additional phases are suspected of causing a magnetic response of the InSb-Mn system at and above room temperature . In most cases reported in the literature, at least two of the described magnetic phases (i.e., Mn clusters and MnSb inclusions on grain boundaries) are liable for the magnetic response of the InSb-Mn system. ,, Applicability of these materials is determined by the fact that their magnetic properties can be tuned by varying the size and concentration of magnetic clusters.…”
mentioning
confidence: 99%
“…Controlled doping of indium antimonide with Mn has been confirmed in bulk monocrystalline or polycrystalline samples as well as thin films . Until now, InSb-Mn in the form of nanowires (NWs) was obtained only by Zhang et al However, the synthesis of InSb-Mn nanowires exhibiting room-temperature ferromagnetism has not been reported so far.…”
The successful synthesis of one-dimensional nanostructures of a narrow band gap semiconductor, exhibiting a ferromagnetic response at room temperature, is reported. High-quality nanowires of InSb-Mn have been produced by templateassisted pulse electrodeposition. Detailed structural and spectroscopic characterizations revealed good crystallinity, a narrow size distribution of the nanostructures, and the ability to control the Mn doping level. The dominating magnetic response at a cryogenic temperature evolves with an increasing Mn concentration from paramagnetic through antiferromagnetic to ferromagnetic. A robust ferromagnetic response of InSb nanowires doped with 2.5% at. of Mn is retained up to a Curie temperature of nearly 500 K.
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