Cluster formation in UV laser ablation plumes of ZnSe and ZnO studied by time-of-flight mass spectrometry

Consecutive fragmentations of the cubane-like zinc cluster [CH3Zn(O-i-C3H7)]4upon electron ionization

“…4,5 Recently, it has also been shown that molecular transition-metal alkoxide clusters can be used for the generation of transition-metal oxide ions in the gas phase, [6][7][8] thereby providing an alternative to laser-ablation techniques for the formation of gaseous metal-oxide clusters. [9][10][11][12] By exploration of different ionization techniques it may therefore become feasible to address some unresolved questions in the gas-phase chemistry and physics of metal-oxide ions. [12][13][14] Here, we report a mass-spectrometric investigation of tetrameric methylzinc iso-propoxide [CH 3 Zn(O-i-C 3 H 7 )] 4 , a compound with a cubic Zn 4 O 4 skeleton which has already proven useful in chemical vapor deposition of zinc materials.…”

Zinc peroxide precursor for ZnO clusters

“…Besides, for obtaining of stoichiometric clusters, a more volatile component of compound, should be in excess of less volatile one. From this point of view, the results of previous laser ablation studies of bulk zinc oxide powder [5,6], which showed a series of (ZnO) n clusters up to about 20 ZnO monomers only, become lucid. Strong interatomic bonds in crystalline ZnO prevented its decomposition under the laser action, and thus the concentration of ions necessary for large cluster formation was not achieved.…”

“…Atomic and diatomic Zn clusters, ZnO, (ZnO) 2 , as well as the clusters with coordinated water molecules are recognized. Oxygen deficient clusters have much less relative abundance compare to the results of ZnO target laser ablation [6] that is due to the excess oxygen in the ZnO 2 precursor. Fig.…”

“…Several studies on (ZnO) n clusters prepared by laser ablation have been done [5,6]. Typically, the clusters were produced by laser ablation of ZnO powder.…”

ZnO films deposited by optimized PLD technique with bias voltages

“…Since the 1960s, a method which applies bias voltages to the substrate has been investigated to improve similar sputtering techniques [4][5][6]. Doh et al [7] reported that applying bias voltages (around +100 V) was effective to improve the sputtering ZnO film quality.…”