Closed Form Solutions for Nonuniform Transmission Lines

Khalaj‐Amirhosseini, Mohammad

doi:10.2528/pierb07111502

Cited by 16 publications

(15 citation statements)

References 12 publications

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“…1. If the cell was a reflecting, non-standard or non-uniform cell [20,21], we would attain the same result in (17) since the difference between the two configurations in Fig. 1 is the presence of the sample [11].…”

Section: A Metric Function For Evaluation Of the Reciprocitysupporting

confidence: 51%

A Simple Approach for Evaluating the Reciprocity of Materials Without Using Any Calibration Standard

Hasar¹,

Şimşek²

2009

PIER

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Abstract-A simple approach for evaluation of the reciprocity of materials using raw scattering parameter measurements is proposed. This approach not only reduces the overall measurement time but also eliminates the need for calibrating the measurement system since it uses calibration-independent measurements. We have derived a metric function for reflecting and nonreflecting cells, which are used to house the sample under test. This function does not depend on electrical properties of materials and their lengths, and whether the cell is reflecting. We have also investigated the effects of the sample length and air pockets between sample external surfaces and cell inner walls on the performance of the evaluation of sample reciprocity.

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Section: A Metric Function For Evaluation Of the Reciprocitysupporting

confidence: 51%

A Simple Approach for Evaluating the Reciprocity of Materials Without Using Any Calibration Standard

Hasar¹,

Şimşek²

2009

PIER

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“…Since the proposed method uses T in (9)-(11) for thickness evaluation of a material for its known/given permittivity, it is expected that the resolution and thus the accuracy of thickness measurements will increase for samples with higher dielectric constants. If the thickness measurements were carried out inside a non-standard or non-uniform cell [33,34] (X and Y regions in Fig. 1), we expect that the accuracy and performance of thickness measurements did not considerably change since the difference between the two configurations in Fig.…”

Section: Measurementsmentioning

confidence: 99%

On the Application of Microwave Calibration-Independent Measurements for Noninvasive Thickness Evaluation of Medium- Or Low-Loss Solid Materials

Hasar¹,

Şimşek²

2009

PIER

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Abstract-Microwave methods require some sort of calibration before physical (thickness, flaw, etc.) and electrical (permittivity, permeability, etc.) measurements of materials. It is always attractive to devise a method which not only eliminates this necessity but also saves time before measurements. Microwave calibration-independent measurements can be utilized for this goal. However, in the literature, these measurements are only applied for electrical measurements of materials. In this research paper, we investigate the performance of microwave calibration-independent measurements for thickness evaluation of dielectric materials to increase the potential of available microwave techniques for thickness evaluation of dielectric materials. We derive an explicit expression for thickness estimation of dielectric materials from calibration-independent measurements for the adopted calibration-independent technique. We also propose a criterion for increasing the performance of measurements. We conducted thickness measurements of six dielectric specimens with different lengths to validate the derived expressions and the proposed criterion for thickness measurements.

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“…Generally, modeling TSVs is still in its early stage of development for 3D SiPs. Most works have focused on the physical modeling of a singleended (SE) TSV in the ground-signal (GS) configuration based on a two-wire transmission line theory [5][6][7]. However, results of the above studies are inapplicable for extending to the ground-signalground (GSG) configuration.…”

Section: Introductionmentioning

confidence: 99%

Comparative Modeling of Single-Ended Through-Silicon Vias in Gs and GSG Configurations Up to v-Band Frequencies

Lu¹,

Horng²

2013

PIER

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Abstract-This work presents a novel comparative modeling scheme for single-ended (SE) through-silicon vias (TSVs) in GSG and GS configurations. Physical scalable models based on the equations developed herein indicate that the use of two symmetric ground TSVs in GSG configuration relatively increases the parasitic capacitance and conductance in the silicon substrate. However, this increase in the parasitic capacitance requires that the parasitic inductance of SE TSV is reduced to maintain the same phase velocity in silicon. According to the modeling results, the GSG configuration has a larger insertion loss than that of the GS configuration because the former has a higher substrate conductance. Nevertheless, when measured using RF coaxial probes, the GSG configuration exhibits a larger measurement bandwidth than the GS configuration. Finally, with the assistance of a double-sided probing system, wideband S-parameter measurement can validate the established equivalent-circuit model of SE TSV in GSG configuration up to V-band frequencies.

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Closed Form Solutions for Nonuniform Transmission Lines

Cited by 16 publications

References 12 publications

A Simple Approach for Evaluating the Reciprocity of Materials Without Using Any Calibration Standard

A Simple Approach for Evaluating the Reciprocity of Materials Without Using Any Calibration Standard

On the Application of Microwave Calibration-Independent Measurements for Noninvasive Thickness Evaluation of Medium- Or Low-Loss Solid Materials

Comparative Modeling of Single-Ended Through-Silicon Vias in Gs and GSG Configurations Up to v-Band Frequencies

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