2005
DOI: 10.1016/j.physb.2005.05.020
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Close-spaced evaporated ZnSe films: Preparation and characterization

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Cited by 51 publications
(31 citation statements)
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“…It was observed a decrease of the period with increasing the condensation temperature of material up to T s ~ 770 K, with the following increase of a to the values presented in JCPDS (а = 0.56688 nm). These results are well-correlated with the experimental data а = 0.566…0.571 nm obtained for (111) line of films deposited using the CSVS method by the authors of [14].…”
Section: Resultssupporting
confidence: 87%
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“…It was observed a decrease of the period with increasing the condensation temperature of material up to T s ~ 770 K, with the following increase of a to the values presented in JCPDS (а = 0.56688 nm). These results are well-correlated with the experimental data а = 0.566…0.571 nm obtained for (111) line of films deposited using the CSVS method by the authors of [14].…”
Section: Resultssupporting
confidence: 87%
“…The only works [14][15][16][17][18] were devoted to study these films. But in [15], the authors studied only structural characteristics of ZnSe films obtained at room temperature.…”
Section: Introductionmentioning
confidence: 99%
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“…An increase in the height of the XRD peak indicates preferred orientation which in turn is expected to enhance considerably the reduction process of the imperfections originating from lattice misfit in the EB evaporated ZnSe films. Venkatasubbaiah et al [22] have observed the same defect characteristics for the ZnSe films prepared by the close space evaporation technique. A close analysis of the dependence of the above microstructural parameters on the substrate temperature indicates that the degree of preferred orientation along with the other microstructural features are more prominent than the crystallite size for films with low thickness.…”
Section: Methodsmentioning
confidence: 58%