Cleaning of wafer edge, bevel and back-side with a torus-shaped capacitively coupled plasma

Jeon, Buil; Chang, Hong‐Young; Song, Jong-Kyu; Jeon, Changwon

doi:10.1088/0963-0252/11/4/319

Cited by 9 publications

(2 citation statements)

References 2 publications

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“…Structured electrodes were found to influence the lateral plasma uniformity by changing the electron power absorption dynamics. For instance, the presence of trenches [62,63] and wafer edges [64][65][66][67] can lead to curved sheaths and enhanced electric fields at edges, which affect the electron dynamics. A depleted plasma density along the radial direction was also found to be induced by the plasma transport towards the sidewall [67].…”

Section: Introductionmentioning

confidence: 99%

2D Particle-in-cell simulations of charged particle dynamics in geometrically asymmetric low pressure capacitive RF plasmas

Wang

Hartmann

Song

et al. 2021

Plasma Sources Sci. Technol.

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Understanding the spatio-temporal dynamics of charged particles in low pressure radio frequency capacitively coupled plasmas (CCP) is the basis for knowledge based process development in these plasma sources. Due to the importance of kinetic non-local effects the particle in cell/Monte Carlo collision (PIC/MCC) simulation became the primary modeling approach. However, due to computational limitations most previous PIC/MCC simulations were restricted to spatial resolution in one dimension. Additionally, most previous studies were based on oversimplified treatments of plasma-surface interactions. Overcoming these problems could clearly lead to a more realistic description of the physics of these plasma sources. In this work, the effects of the reactor geometry in combination with realistic heavy particle and electron induced secondary electron emission coefficients (SEEC) on the charged particle dynamics are revealed by GPU based 2D3V PIC/MCC simulations of argon discharges operated at 0.5 Pa and at a high voltage amplitude of 1000 V. The geometrical reactor asymmetry as well as the SEECs are found to affect the power absorption dynamics and distribution functions of electrons and ions strongly by determining the sheath voltages and widths adjacent to powered and grounded surface elements as well as via the self-excitation of the plasma series resonance. It is noticed that secondary electrons play important roles even at low pressures. Electron induced secondary electrons (δ-electrons) are found to cause up to half of the total ionization, while heavy particle induced secondary electrons (γ-electrons) do not cause much ionization directly, but induce most of the δ-electron emission from boundary surfaces. The fundamental insights obtained into the 2D-space resolved charged particle dynamics are used to understand the formation of energy distribution functions of electrons and ions for different reactor geometries and surface conditions.

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Section: Introductionmentioning

confidence: 99%

2D Particle-in-cell simulations of charged particle dynamics in geometrically asymmetric low pressure capacitive RF plasmas

Wang

Hartmann

Song

et al. 2021

Plasma Sources Sci. Technol.

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show abstract

“…The shape of the sheath over and in the gap can be influenced by the WFG geometry and the electrical properties (dielectric constant and conductivity) of the wafer and FR. This can in turn modify the orientation of electric fields and ion trajectories [1,2]. In this regard, plasma moulding over steps, trenches and holes has recently been investigated [3,4].…”

mentioning

confidence: 99%

Ion energy and angular distributions into the wafer–focus ring gap in capacitively coupled discharges

Babaeva¹,

Kushner²

2008

J. Phys. D: Appl. Phys.

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The termination of the edge of wafers in reactive ion etching reactors is important for obtaining uniform fluxes of reactants across the substrate. Structures such as focus rings (FRs) are often used to improve the uniformity of fluxes. There is a gap of hundreds of micrometres to a few mm between the edge of the wafer and the FR for mechanical clearance. Plasma penetration into the gap can produce particle forming films and erosion of consumable parts. In this paper, we discuss results from a computational investigation of ion energy and angular distributions incident into the wafer-focus ring gap. The geometry and electrical properties of the FR can skew the angle and limit the extent of energies of ions penetrating into the gap.

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Approaches to defect characterization, mitigation and reduction

Tseng¹

2022

Advances in Chemical Mechanical Planarization (CMP)

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Cleaning of wafer edge, bevel and back-side with a torus-shaped capacitively coupled plasma

Cited by 9 publications

References 2 publications

2D Particle-in-cell simulations of charged particle dynamics in geometrically asymmetric low pressure capacitive RF plasmas

2D Particle-in-cell simulations of charged particle dynamics in geometrically asymmetric low pressure capacitive RF plasmas

Ion energy and angular distributions into the wafer–focus ring gap in capacitively coupled discharges

Approaches to defect characterization, mitigation and reduction

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