Cleaning-Free Deposition of Highly Crystallized Si Films on Plastic Film Substrates Using Pulsed-Plasma CVD under Near-Atmospheric Pressure

Abstract

By employing a pulsed-discharge, near-atmospheric-pressure plasma-enhanced chemical vapor deposition, equally qualified pair of poly-Si films are grown on polyethylene terephthalate (PET) substrates placed at both the grounded and the powered electrodes. This finding leads to a roll-to-roll-type deposition system of cleaning-free operation for film growth.