CLEAN: Cryogenic Link for Electric Aircraft Propulsion

Saha, Pradip Chandra; Shi, Yanjun; Steurer, M.; Cheetham, Peter; Kim, Chul Han; Pamidi, Sastry; Goldman, Jonathan W.; German, Brian; Jin, Zhiyang; Graber, Lukas; Park, Chanyeop

doi:10.1109/tasc.2023.3241600

Cited by 11 publications

(2 citation statements)

References 34 publications

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Section: Introductionmentioning

confidence: 99%

“…A number of system level studies have also been proposed, where the operating conditions of the power electronics in a cryo-electric aircraft have been discussed [38][39][40][41][42]. In [38] the architecture of a cryo-electric aircraft is discussed, where the power electronics driving the HTS motor are assumed to be operating between 20 K to 120 K, and IGBTs are suggested for use as switches as they are relatively easy to drive. In [39,40] the DC/AC inverter is assumed to operate between 40 K and 120 K over the course of a flight, and based on the Airbus ASCEND architecture [42] the power electronics efficiency, including filtering, is expected to be ⩾99.41% before 2030 with a power density ⩾31.35 kW kg −1 .…”

Section: Introductionmentioning

confidence: 99%

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GaN-based cryogenic temperature power electronics for superconducting motors in cryo-electric aircraft

Wadsworth

Thrimawithana

Zhao

et al. 2023

Supercond. Sci. Technol.

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Climate change has spurred a shift to electric transportation, but aviation faces challenges with electric energy storage and propulsion. Cryogenically cooled superconductingmotors, along with cryogenically cooled power electronics, offer a solution to increase the efficiency and power density of electric aircraft. This paper evaluates the feasibility of cryogenic power electronics by characterizing new technologies (GaN, nanocrystalline) using new experimental techniques. It is found that the on resistance reductions of GaN E-HEMTs at cryogenic temperatures depend on the maximum blocking voltage of the device, and the size of the gate resistor for ohmic p-GaN devices. Different types of nanocrystalline cores are shown to vary greatly in their behavior at cryogenic temperatures, which is measured using a modified core loss measurement circuit. Further analysis shows that the losses of a GaN based cryogenic inverter could potentially halve that of an equivalent Si based inverter

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