Classical mechanism for negative magnetoresistance in two dimensions

Дмитриев, А. П.; Dyakonov, Michel; Jullien, R.

doi:10.1103/physrevb.64.233321

Cited by 61 publications

(79 citation statements)

References 19 publications

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“…3 In the same inset we show the values of F σ 0 determined from the magnetoresistance treatment. Some difference between F σ 0 -values obtained by the different ways can be sequence of the classical magnetoresistance mechanisms, 27,28,29,30 which are not essential in our case, but, nevertheless, can influence the shape of the ρ xx -curve.…”

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confidence: 72%

Hole-hole interaction in a strainedInxGa1−xAstwo-dimensional system

et al. 2005

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The interaction correction to the conductivity of 2D hole gas in strained GaAs/InxGa1−xAs/GaAs quantum well structures was studied. It is shown that the Zeeman splitting, spin relaxation and ballistic contribution should be taking into account for reliable determination of the Fermi-liquid constant F σ 0 . The proper consideration of these effects allows us to describe both th temperature and magnetic field dependences of the conductivity and find the value of F σ 0 .

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confidence: 72%

Hole-hole interaction in a strainedInxGa1−xAstwo-dimensional system

et al. 2005

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“…As a prominent example, memory effects in magnetotransport of composite fermions subject to an effective smooth random magnetic field explain a positive MR around half-filling of the lowest Landau level 7 . Another type of memory effects taking place in systems with rare strong scatterers is responsible for a negative MR in disordered antidot arrays 3,4,5,8,9 . However, such effects turn out to be of a relatively minor importance for the low-field quasiclassical magnetotransport in semiconductor heterostructures with typical experimental parameters, while at higher B they are obscured by the development of the Shubnikovde Haas oscillation (SdHO).…”

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confidence: 99%

“…There are several distinct sources of a nontrivial MR, which reflect the rich physics of the magnetotransport in 2D systems. First of all, it has been recognized recently that even within the quasiclassical theory memory effects may lead to strong MR 3,4,5,6,7,8,9 . The essence of such effects is that a particle "keeps memory" about the presence (or absence) of a scatterer in a spatial region which it has already visited.…”

Section: Introductionmentioning

confidence: 99%

Interaction-induced magnetoresistance in a two-dimensional electron gas

2004

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We study the interaction-induced quantum correction δσ αβ to the conductivity tensor of electrons in two dimensions for arbitrary T τ (where T is the temperature and τ the transport scattering time), magnetic field, and type of disorder. A general theory is developed, allowing us to express δσ αβ in terms of classical propagators ("ballistic diffusons"). The formalism is used to calculate the interaction contribution to the longitudinal and the Hall resistivities in a transverse magnetic field in the whole range of temperature from the diffusive (T τ ≪ 1) to the ballistic (T τ 1) regime, both in smooth disorder and in the presence of short-range scatterers. Further, we apply the formalism to anisotropic systems and demonstrate that the interaction induces novel quantum oscillations in the resistivity of lateral superlattices.

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“…However, for B = 0 the role of ME is dramatically increased due to a strong dependence of return probability on B. Recent studies demonstrated that ME lead to a variety of nontrivial magnetotransport phenomena in 2D disordered systems such as magnetic-field-induced classical localization [7,8], high-field negative [7,8,9,10,11] and positive MR [12], low-field anomalous MR [13,14,15], and non-Lorentzian shape of cyclotron resonance [16].…”

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Sharp magnetic field dependence of the two-dimensional Hall coefficient induced by classical memory effects

Дмитриев

Kachorovskii

2008

Phys. Rev. B

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We show that a sharp dependence of the Hall coefficient R on the magnetic field B arises in twodimensional electron systems with randomly located strong scatterers. The phenomenon is due to classical memory effects. We calculate analytically the dependence R(B) for the case of scattering by hard disks of radius a, randomly distributed with concentration n0 ≪ 1/a 2 . We demonstrate that in very weak magnetic fields (ωcτ n0a 2 ) memory effects lead to a considerable renormalization of the Boltzmann value of the Hall coefficient: δR/R ∼ 1. With increasing magnetic field, the relative correction to R decreases, then changes sign, and saturates at the value δR/R ∼ −n0a 2 . We also discuss the effect of the smooth disorder on the dependence of R on B.PACS numbers: 05.60.+w, 73.43.Qt, 73.50.Jt The simplest theoretical description of the magnetotransport properties of the twodimensional (2D) degenerated electron gas is based on the Boltzmann equation which yields the well-known expressions for the components of the resistivity tensor:Here τ is the transport scattering time, ω c = |e|B/mc is the cyclotron frequency, R = 1/enc < 0 is the Hall coefficient, and n is the electron concentration. Thus, in the frame of the Boltzmann approach, ρ xx and R do not depend on magnetic field B. Experimental measurements of ρ xx and R are widely used to find τ and n.It is known, that Eqs.(1) may become invalid due to a number of effects of both quantum and classical nature. The most remarkable of them is the Quantum Hall Effect. Another quantum effect, weak localization, leads to negative magnetoresistance (MR) -the decrease of ρ xx with B, concentrated in the region of weak magnetic fields [1]. Besides, the dependence of ρ xx on B appears due to quantum effects related to electron-electron interaction [2] (see also [3] for review). At the same time, both weak localization and electron-electron interaction (in frame of standard Altshuler-Aronov theory) do not result in any dependence of R on B (see [4] and [2,5,6], respectively).The dependence of ρ xx on B may also be caused by classical effects. One of the reasons is that in the Boltzmann approach one neglects classical memory effects (ME) arising as a manifestation of non-Markovian nature of electron dynamics in a static random potential. Physically, a diffusive electron returning to a certain region of space "remembers" the random potential landscape in this region, so its motion is not purely chaotic as it is assumed in the Boltzmann picture. For B = 0, non-Markovian corrections to kinetic coefficients are usually small. In particular, in a case of hard-core scatterers of radius a (impenetrable disks) randomly distributed with concentration n 0 , ME-induced relative correction to the resistivity is proportional to the gas parameter β 0 = a/l = 2n 0 a 2 ≪ 1 (l = 1/2an 0 is the mean free path). However, for B = 0 the role of ME is dramatically increased due to a strong dependence of return probability on B. Recent studies demonstrated that ME lead to a variety of nontrivial magnet...

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Classical mechanism for negative magnetoresistance in two dimensions

Cited by 61 publications

References 19 publications

Hole-hole interaction in a strainedInxGa1−xAstwo-dimensional system

Hole-hole interaction in a strainedInxGa1−xAstwo-dimensional system

Interaction-induced magnetoresistance in a two-dimensional electron gas

Sharp magnetic field dependence of the two-dimensional Hall coefficient induced by classical memory effects

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