Classical capacitance of few-electron dielectric spheres

Zhu, J.; LaFave, Tim; Tsu, Raphael

doi:10.1016/j.mejo.2006.07.013

Cited by 12 publications

(3 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In a classical electrostatic model where the carriers are described by point charges that are free to move inside a dielectric sphere, 21 Coulomb repulsion leads to localization of the injected carriers near the surface of the quantum dot. In our quantum-mechanical calculations, carrier localization is determined by the spatial localization of the single-particle wave functions and by the mixing of different configurations via configuration interaction.…”

Section: B Charge Distribution Of the Injected Carriersmentioning

confidence: 99%

Electron and hole addition energies in PbSe quantum dots

Franceschetti

Zunger

2007

Phys. Rev. B

View full text Add to dashboard Cite

We calculate electron and hole addition energies of PbSe quantum dots using a pseudopotential configuration-interaction approach. We find that ͑i͒ the addition energies are nearly constant for the first eight carriers occupying the S-like shell. ͑ii͒ The charging sequence of the first eight carriers is non-Aufbau, but filling of the P-like single-particle states takes place only after the S-like states are filled. ͑iii͒ The charging spectrum shows bunching-up of all lines as the dielectric constant out of the material surrounding the dot increases. At the same time, the addition energies are significantly reduced. ͑iv͒ The calculated optical gap shows a rather weak dependence on out , reflecting a cancellation between electron-hole interaction energies and surface polarization self-energies.

show abstract

Section: B Charge Distribution Of the Injected Carriersmentioning

confidence: 99%

Electron and hole addition energies in PbSe quantum dots

Franceschetti

Zunger

2007

Phys. Rev. B

View full text Add to dashboard Cite

show abstract

“…For this reason, this work can be of interest to a wide audience of physics educators [31] as well as some researchers working on the field of electrostatics [32][33][34] or opto-electronic materials [35,36]. In particular, we believe that the results reported in this work would be of great interest to undergraduate students and university teachers, because this problem illustrates very well key concepts of electrostatics involving a wide range of mathematical tools (special functions, expansions, infinite sums and numerical calculations).…”

Section: Discussionmentioning

confidence: 99%

Interaction energy between two identical hemispherical surfaces with uniform surface charge density

Ciftja¹,

Colbert-Pollack²,

Ciftja³

et al. 2021

Eur. J. Phys.

View full text Add to dashboard Cite

Obtaining the interaction energy between two uniformly charged hemispherical surfaces in compact analytical form seems to be an impossible task to achieve under arbitrary conditions. However, we show in this work that one can obtain the interaction energy between two identical hemispherical surfaces with uniform surface charge density for the special condition of them touching each other along the ‘equator’. The mathematical solution method that we apply is remarkable in that the bulk of the treatment is analytic with the only drawback of having to rely on knowledge of certain special functions and their properties.

show abstract

“…The development of micro-scale engineering in the area of electrical and computer engineering demonstrates technology advancements in low cost, high efficiency, and miniaturization. The understanding of the structure and properties of materials, coupled with system-driven design, fabrication, and optimization of materials, leads to the development and exploitation of new materials and devices for future microand nano-systems 2 . Reliable modeling and simulation are the basis for understanding and optimization of materials and structures of devices, and the basis for development of the emerging nanoelectronic devices.…”

Section: Nano Device Simulation Projectmentioning

confidence: 99%

An Undergraduate Summer Research Project: Simulation Of Nanostructure Based Devices And Associated Student Learning

Zhu¹,

Varma²

2007 Annual Conference &Amp; Exposition Proceedings

Self Cite

View full text Add to dashboard Cite

Undergraduate Summer Research Projects open up the opportunities for students to gain research experience. Research experiences for undergraduate students not only enhance students' ability to apply the learned knowledge in practical applications but provide students with opportunities to develop lifelong learning skills as well. In 2002, our institution launched a summer research program under the umbrella of the Summer Research Institute to increase the involvement of undergraduate students in research activities. The other goal of the program was to involve regional high school students in undergraduate research in partnership with university students and faculty, and to attract them to join our institution after their graduation from high school. In Summer 2006, the Engineering Technology programs were funded for the first time for two research projects. This paper describes one such research project entitled "Design and Simulation of Nanostructure-Based Devices." Due to funding and time limitations, the summer research project was a challenge not only for the students but also for the project director .The scope and objectives of the research project were clearly defined to accomplish the results with in the eight-week period. Under this program of undergraduate research, a senior student participating in the project served as mentor to a high school student. During the course of this project, students were required to do literature search related to the project, design a device, and simulate the designed device. Although time limitations and student abilities of participating students posed challenges, the basic objectives of the project were achieved. The participating students presented their research at the Summer Research Institute symposium held on the university campus in Fall 2006. This research program can serve as a model at other institutions.

show abstract

Classical capacitance of few-electron dielectric spheres

Cited by 12 publications

References 11 publications

Electron and hole addition energies in PbSe quantum dots

Electron and hole addition energies in PbSe quantum dots

Interaction energy between two identical hemispherical surfaces with uniform surface charge density

An Undergraduate Summer Research Project: Simulation Of Nanostructure Based Devices And Associated Student Learning

Contact Info

Product

Resources

About