Class-iF<sup>−1</sup>: Linearity Enhanced High Efficiency Power Amplifier

Chu, Chenhao; Dhar, Sagar K.; Sharma, Tushar; Zhu, Anding

doi:10.1109/pawr53092.2022.9719742

Cited by 4 publications

(3 citation statements)

References 7 publications

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“…In consistency to [29], a broad design space with source second harmonic around the open-circuit region is confirmed, where excellent gain flatness can be achieved. Based on the comprehensive analysis and load-pull simulation, a generalized second harmonic source design space is concluded and shown in Fig.…”

Section: A Load-pull With Cw Signal Stimulationmentioning

confidence: 65%

“…To resolve the highly nonlinear double inflection characteristics in the conventional Class-F −1 , a new class of PA, called "Class-iF −1 ," has been proposed in [29], by introducing a concept of terminating the second harmonic source impedance (Z 2S ) with open circuit instead of conventional short circuit, which results in a flat gain profile as shown in Fig. 1(b).…”

mentioning

confidence: 99%

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High-Efficiency Class-iF⁻¹ Power Amplifier With Enhanced Linearity

Chu

Tamrakar

Dhar

et al. 2023

IEEE Trans. Microwave Theory Techn.

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This article presents a new class of power amplifier (PA), designated as Class-iF −1 , that utilizes input harmonics to achieve high efficiency with enhanced linearity performance beyond the conventional Class-F −1 PA. The amplitude-toamplitude modulation (AM/AM) profile of the conventional Class-F −1 PA is mathematically modeled as a function of the input drive level, such that the occurrence of inflection points can be investigated. Theoretical derivation shows that the appropriate utilization of input nonlinearity poses a solution to rectify the double inflection characteristics of the conventional Class-F −1 PA, which, consequently, can be realized by proper manipulation of second harmonic source impedance (Z 2S ). The theoretical findings were validated with load-pull results at 2.3 GHz with a 2-mm gallium nitride (GaN) device, presenting enhanced linearizable output power and efficiency for the Class-iF −1 PA, with a broad second harmonic design space over the open-circuit region. As proof of concept, a Class-iF −1 PA was designed and fabricated, obtaining 40.1-40.8 dBm output power and 71.2%-77.3% drain efficiency (DE) performance at 3-dB gain compression level operating over 2.0-2.6-GHz frequency range. When tested with a 20-MHz 8.5-dB peak-to-average-power-ratio (PAPR) long-term evolution (LTE) signal, around 32.01-dBm average output power was attained at 2.3 GHz with an average DE of 34.59% and −56.05 dBc adjacent channel power ratios (ACPRs) after digital predistortion (DPD) correction.

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Section: A Load-pull With Cw Signal Stimulationmentioning

confidence: 65%

mentioning

confidence: 99%

High-Efficiency Class-iF⁻¹ Power Amplifier With Enhanced Linearity

Chu

Tamrakar

Dhar

et al. 2023

IEEE Trans. Microwave Theory Techn.

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“…In theory, the bandwidth of both the LMBA and SLMBA configurations is only constrained by the bandwidth of the input and output quadrature couplers [26], [33], [34], [38], [39]. However, in practice, the active devices of CA and BA cells require proper source/load fundamental or harmonic impedance tuning to achieve high efficiency with broadband operation [32], [35], [36], [37], [40], [41], [42], [43], [44], [45], [46]. Although the CM theory provides PA design with high-efficiency broadband load design continuum, a fundamental limitation exists that most of the practical This work is licensed under a Creative Commons Attribution 4.0 License.…”

Section: Introductionmentioning

confidence: 99%

Broadband Sequential Load Modulated Balanced Amplifier With Extended Design Space Using Second Harmonic Manipulation

Chu

Pang

Darraji³

et al. 2023

IEEE Trans. Microwave Theory Techn.

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This article presents the design methodology of a broadband radio frequency (RF)-input sequential load modulated balanced amplifier (SLMBA) with extended high-efficiency design space, by introducing the second-harmonic load manipulation over an enlarged range for the control amplifier (CA). The extension of CA load design space not only can provide the timedomain-varying drain current waveform inside the entire design continuum but also allows maintaining high efficiency at output power back-off (OBO) over an extended operation bandwidth. To validate the theory, a broadband SLMBA operating at 2.05-3.65 GHz was designed and fabricated using packaged gallium nitride (GaN) transistors. The implemented power amplifier (PA) attains a measured 45.2-46.8-dBm peak output power. Drain efficiency (DE) of 61.2%-79.7% at saturation and 50.5%-66.2% at 8-dB OBO is achieved throughout the designed bandwidth. When tested with a 100-MHz long-term evolution (LTE) signal with a peak-to-average-power ratio (PAPR) of 8 dB, the proposed SLMBA achieves 50.7%-63.5% average DE over 2.05-3.55 GHz and better than −45.1 dBc adjacent channel power ratio (ACPR) after digital predistortion (DPD).

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A Dual-band Radio Frequency Power Amplifier Suitable for both Daily and Industrial Communication

Gao,

Qiu,

Bian

et al. 2023

2023 3rd International Conference on Electronic Information Engineering and Computer (EIECT)

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Class-iF⁻¹: Linearity Enhanced High Efficiency Power Amplifier

Cited by 4 publications

References 7 publications

High-Efficiency Class-iF⁻¹ Power Amplifier With Enhanced Linearity

High-Efficiency Class-iF⁻¹ Power Amplifier With Enhanced Linearity

Broadband Sequential Load Modulated Balanced Amplifier With Extended Design Space Using Second Harmonic Manipulation

A Dual-band Radio Frequency Power Amplifier Suitable for both Daily and Industrial Communication

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Class-iF−1: Linearity Enhanced High Efficiency Power Amplifier

Cited by 4 publications

References 7 publications

High-Efficiency Class-iF−1 Power Amplifier With Enhanced Linearity

High-Efficiency Class-iF−1 Power Amplifier With Enhanced Linearity

Broadband Sequential Load Modulated Balanced Amplifier With Extended Design Space Using Second Harmonic Manipulation

A Dual-band Radio Frequency Power Amplifier Suitable for both Daily and Industrial Communication

Contact Info

Product

Resources

About

Class-iF⁻¹: Linearity Enhanced High Efficiency Power Amplifier

High-Efficiency Class-iF⁻¹ Power Amplifier With Enhanced Linearity

High-Efficiency Class-iF⁻¹ Power Amplifier With Enhanced Linearity