Class D Switching Power Amplifier with a Filter under Load Mismatch Conditions

Varlamov, O. V.; Gromorushkin, V. N.

doi:10.1109/weconf48837.2020.9131508

Cited by 25 publications

(2 citation statements)

References 11 publications

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“…Although class-A, B, and C do not utilize rigid linear gain performance, the magnitude of input and output signals are relatable. Push-pull class-D voltage switching and current switching stages use series tuned resonant circuits or parallel tuned resonant circuits respectively, driven by two on-off switches [11][12]. In switching operation, when one transistor is ON and the other transistor is OFF at the same time, each transistor (switch) is in ON-state for half of the input signal.…”

Section: Introductionmentioning

confidence: 99%

“…In switching operation, when one transistor is ON and the other transistor is OFF at the same time, each transistor (switch) is in ON-state for half of the input signal. Therefore, push-pull amplifiers are efficient because of the switching transition, and there is a loss of efficiency at high frequencies [12]. It has been observed that class-C PA works for less than a half cycle, and has higher noise effects and distortion [13].…”

Section: Introductionmentioning

confidence: 99%

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A Modified Design of Class-E Power Amplifier with Balanced FETs and High Output Power for RFID Applications

Zahid

Jiang

Lü

et al. 2021

Proc. eng. technol. innov.

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In Radio Frequency (RF) communication, a Power Amplifier (PA) is used to amplify the signal at the required power level with less utilization of Direct Current (DC) power. The main characteristic of class-E PA is sturdy nonlinearity due to the switching mode action. In this study, a modified design of class-E PA with balanced Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) and high output power for Electronic Article Surveillance (EAS) Radio Frequency Identification (RFID) application is presented. MOSFETs are adjusted to have high output performance of about 80% for RFID-based EAS system. A matching network is also proposed for accurate matching because there are differences in the behavior between RF waves and low frequency waves. The design of a matching network is a tradeoff among the complexity, adjustability, implementation, and bandwidth for the required output power and frequency. The implemented PA is capable of providing 44.8 dBm output power with Power-Added Efficiency (PAE) of 78.5% at 7.7 MHz to 8.7 MHz.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%