Cl
                  2
                ∕
                  O
                  2
          -inductively coupled plasma etching of deep hole-type photonic crystals in InP

Carlström, Carl-Fredrik; Karouta, F.; Heijden, van der Rw Rob; Salemink, H.W.M.; Drift, van der Ewjm

doi:10.1116/1.2151915

Cited by 43 publications

(30 citation statements)

References 16 publications

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“…The PCs were fabricated by etching a triangular lattice of air holes of < 250 nanometer (nm) diameter, through a 500 nm InP/500 nm InGaAsP layerstack on an InP substrate using Cl 2 /O 2 chemistry [24]. The hole depth is at least 2.5 µm , i.e.…”

Section: Methodsmentioning

confidence: 99%

Wavelength tuning of planar photonic crystals by local processing of individual holes

Kicken¹,

Alkemade²,

Heijden³

et al. 2009

Opt. Express

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Tuning of the resonant wavelength of a single hole defect cavity in planar photonic crystals was demonstrated using transmission spectroscopy. Local post-production processing of single holes in a planar photonic crystal is carried out after selectively opening a masking layer by focused ion beam milling. The resonance was blue-shifted by enlargement of selected holes using local wet chemical etching and red-shifted by infiltration with liquid crystals. This method can be applied to precisely control the resonant frequency, and can also be used for mode selective tuning. © 2009 Optical Society of AmericaOCIS codes: (000.0000) General.

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Section: Methodsmentioning

confidence: 99%

Wavelength tuning of planar photonic crystals by local processing of individual holes

Kicken¹,

Alkemade²,

Heijden³

et al. 2009

Opt. Express

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“…18 These structures were placed between 2.5-m-wide access RWGs to allow for transmission spectroscopy ͓see Fig. 2͑a͔͒.…”

Section: Methodsmentioning

confidence: 99%

Wavelength-sized cavities in high aspect InP/InGaAsP/InP photonic crystals

Kicken¹,

Barbu²,

Heijden³

et al. 2009

Journal of Applied Physics

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The photonic properties of two classes of wavelength-sized cavities are reported for deeply etched InP/InGaAsP/InP planar photonic crystals. The high aspect, deeply etched structures are studied as potential building blocks for nonmembrane type photonic devices in standard InP photonic integrated circuits. The first class consists of cavities of one unit cell in one direction and varying size in the other planar direction. The studied class includes a Fabry-Perot type cavity with one row of missing holes, a simple single missing hole defect cavity, and a cavity consisting of two holes which have been slightly shifted and reduced in hole radius. The best observed quality factor of 65 in this class is obtained for a single hole defect cavity. The second class is comprised of cavities which are derived from a three missing row defect in one direction and varying size in the other direction. This includes a Fabry-Perot type cavity with three rows of missing holes, a point defect cavity consisting of seven unetched holes and a six hole ring cavity. The best observed quality factor of 300 is obtained for the ring cavity in this second class of structures, which is adequate for applications.

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“…From this it follows that viscosity should not be critical for the infiltration. Triangular lattice photonic crystal patterns were fabricated in InP substrates using 100 keV electron-beam lithography, reactive ion etching of a SiN x hard mask and Cl 2 /O 2 -based inductively coupled plasma etching 14 (see Figure 1). The patterns were filled with polymer by infiltration with a liquid monomer and subsequent thermal polymerization.…”

Section: Infiltration Parametersmentioning

confidence: 99%

Two-dimensional photonic crystals from semiconductor material with polymer filled holes

et al. 2006

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Polymer filling of the air holes of indiumphosphide based two-dimensional photonic crystals is reported. The filling is performed by infiltration with a liquid monomer and solidification of the infill in situ by thermal polymerization. Complete hole filling is obtained with infiltration under ambient pressure. This conclusion is based both on crosssectional scanning electron microscope inspection of the filled samples as well as on optical transmission measurements.

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Cl 2 ∕ O 2 -inductively coupled plasma etching of deep hole-type photonic crystals in InP

Cited by 43 publications

References 16 publications

Wavelength tuning of planar photonic crystals by local processing of individual holes

Wavelength tuning of planar photonic crystals by local processing of individual holes

Wavelength-sized cavities in high aspect InP/InGaAsP/InP photonic crystals

Two-dimensional photonic crystals from semiconductor material with polymer filled holes

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