CIS module pilot processing applying concurrent rapid selenization and sulfurization of large area thin film precursors

Palm, J.; Probst, V.; Brummer, Alexander; Stetter, W.; Tölle, R.; Niesen, T. P.; Visbeck, S.; Hernández, O.; Wendl, M.; Vogt, Helmut; Calwer, H.; Freienstein, B.; Karg, F.

doi:10.1016/s0040-6090(03)00249-9

Cited by 65 publications

(31 citation statements)

References 7 publications

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“…To compare, typical uniformities expected from co-evaporation inline system are in the 5% range [ 63 ] while the uniformity of the two-step sputtering processes have been reported in the range of 2%. [ 64 ] Taking into account the above arguments, the ED of individual metallic layers from water-based solutions with a subsequent annealing in a chalcogen atmosphere is suitable to obtain high-quality CIGS layers in an industrially scalable manner.…”

Section: Cigsmentioning

confidence: 99%

All Solution‐Processed Chalcogenide Solar Cells – from Single Functional Layers Towards a 13.8% Efficient CIGS Device

Romanyuk

Hagendorfer

Stücheli

et al. 2014

Adv Funct Materials

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Solution processing of inorganic thin fi lms has become an important thrust in material research community because it offers low-cost and high-throughput deposition of various functional coatings and devices. Especially inorganic thin fi lm solar cells -macroelectronic devices that rely on consecutive deposition of layers on large-area rigid and fl exible substrates -could benefi t from solution approaches in order to realize their low-cost nature. This article critically reviews existing deposition approaches of functional layers for chalcogenide solar cells with an extension to other thin fi lm technologies. Only true solutions of readily available metal salts in appropriate solvents are considered without the need of pre-fabricated nanoparticles. By combining three promising approaches, an air-stable Cu(In,Ga)Se 2 thin fi lm solar cell with effi ciency of 13.8% is demonstrated where all constituent layers (except the metal back contact) are processed from solutions. Notably, water is employed as the solvent in all steps, highlighting the potential for safe manufacturing with high utilization rates. remarkable improvements in conversion effi ciency. [ 1 ] The highest effi ciency of 21.0% has been achieved for two thin fi lm technologies so far: Cu(In,Ga)Se 2 (CIGS) [ 2 ] and CdTe. [ 3 ] Remarkably, both CIGS and CdTe records are exceeding the highest value of 20.4% for the market leading polycrystalline silicon wafer technology. Kesterite Cu 2 ZnSn(S,Se) 4 (CZTSSe) solar cells are often considered as low-cost alternatives to CIGS and CdTe because they consist of only earth-abundant and nontoxic elements although the effi ciency is currently limited to 12.6% (12.7% not certifi ed). [ 4 ] Well-established dye-sensitized solar cell (DSSC) and amorphous silicon (a-Si) technology peak at 12.3% and 13.4%, respectively. [ 1 ] The most recent boom in TFPV -organometallic halide perovskite cells -has shown an incredible spurt by advancing effi ciency from below 5% to 17.9%(!) within just 3 years. [ 5 ] On the border to classical TFSC is the thin crystalline silicon technology that employs liftoff of 50-micrometer-thick Si wafers to yield up to 21.2%-efficient solar cells. [ 6 ] These massive research and development efforts in the fi eld of TFSC clearly refl ect their commercial value for manufacturing inexpensive effi cient solar modules -rigid or fl exible. Functional layers for the high effi ciency devices are deposited mostly in a batch-to-batch manner using vacuum-based methods such as evaporation, sputtering, or chemical vapor deposition. For example, Figure 1 exhibits a cross-section of a >20% effi cient CIGS solar cell in the so-called substrate confi guration, where 5 out of 6 functional layers are deposited by evaporation or sputtering. In this respect, non-vacuum deposition methods are often promoted as alternative approaches to reduce capital investment costs, offer fast roll-to-roll (R2R) processing and eventually reduce the PV module prices. Particularly desirable among non-vacuum approaches are solutionb...

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Section: Cigsmentioning

confidence: 99%

All Solution‐Processed Chalcogenide Solar Cells – from Single Functional Layers Towards a 13.8% Efficient CIGS Device

Romanyuk

Hagendorfer

Stücheli

et al. 2014

Adv Funct Materials

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“…As described in Section 1.2.3 , CIGS can be formed by annealing thin fi lms of the metal elements in a chalcogen atmosphere: the Showa -Shell -Siemens industrial process is based on this route [80,81] . Whether a stack of metals or an alloy layer is used depends in part on the annealing process.…”

Section: Cu(inga)se 2 Via Stacked Metal Layersmentioning

confidence: 99%

Applications of Electrochemistry in the Fabrication and Characterization of Thin‐Film Solar Cells

Dale

Peter

2010

Advances in Electrochemical Sciences and Engineering

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“…Process development primarily during the third subcontract phase emphasized demonstration and implementation of a "sputter dose" process developed by our Munich R&D colleagues [14]. As implemented at SSI, a compound containing sodium is sputtered on the Mo base electrodes prior to deposition of nominally standard precursors and the precursors are processed through nominally the baseline SSI process.…”

Section: Technical Review Capacity and Product Line Expansion Overviementioning

confidence: 99%

Process R&D for CIS-Based Thin-Film PV: Final Technical Report, April 2002 - April 2005

Tarrant

2006

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SSI began a 3-year, 3 phase cost-shared subcontract (No. ZN-1-19019-5) on May 1, 1991 with the overall project goal of fabricating a large area, stable, 12.5% aperture efficient encapsulated CIS module by scaleable, low-cost techniques on inexpensive substrates. Subcontract accomplishments were facilitated by addressing module reproducibility issues using small area test devices and mini-modules. Statistical process control disciplines were adopted to rigorously quantify process reproducibility. SSI addressed uniformity and reproducibility of absorber formation, interactions of the substrate with the absorber, and performance losses near interconnects. Subcontract accomplishments included demonstration of encapsulated module efficiencies that were at that time the highest reported mini-module efficiencies for any thin film technology (encapsulated 12.8% efficient mini-module on 68.9 cm 2 and an NREL-verified 12.7% efficient unencapsulated circuit on 69 cm 2 with a prismatic cover), demonstration of a champion large area (3860 cm 2 ) encapsulated module efficiency of 10.3% that was the first thin film module of its size to exceed the 10% efficiency level, and delivery to NREL of a one kilowatt array of large area (~3890 cm From September 1995 through December 1998, SSI participated in a 3-year, 3 phase cost-shared TFPPP subcontract (No. ZAF-5-14142-03). The primary objective of this subcontract was to establish reliable high-throughput, high-yield thin film deposition processes in order to make CIS a viable option for the next generation of photovoltaics. Outdoor testing, accelerated environmental testing, and packaging development progressed throughout all phases of this subcontract. During Phase 1, SSI rigorously demonstrating process reproducibility and yield for a 10x10-cm monolithically interconnected "mini-module" baseline process and demonstrated a 13.6% aperture area efficient mini-module. During Phase 2, SSI demonstrated the need to replace an existing large area reactor with a reactor based on a more direct scale-up of the baseline reactor, built a new large area reactor, and demonstrated comparable performance for the mini-modules baseline and larger 28x30-cm circuit plates. SSI developed products and prototype large area modules using a new package designed to integrate small circuit plates into larger modules. A one kilowatt array of Cu (In,Ga)(S,Se) 2 modules was delivered to NREL replacing a previously installed array based on an older absorber formation technology without sulfur incorporated in the absorber (Cu(In,Ga)Se 2 ). This array demonstrated significant improvements in efficiency and the temperature coefficient for power. SSI introduced two new 5-watt (ST5) and 10-watt (ST10) CIS-based products designed for use in 12 V systems, and NREL confirmed a new world-record efficiency of 11.1% on a SSI large area (3665 cm 2 ) module. During Phase 3, substrate size was scaled from ~30x30 cm to ~30x120 cm and good process control was demonstrated with an average efficiency of 10.8%. Commercial produc...

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CIS module pilot processing applying concurrent rapid selenization and sulfurization of large area thin film precursors

Cited by 65 publications

References 7 publications

All Solution‐Processed Chalcogenide Solar Cells – from Single Functional Layers Towards a 13.8% Efficient CIGS Device

All Solution‐Processed Chalcogenide Solar Cells – from Single Functional Layers Towards a 13.8% Efficient CIGS Device

Applications of Electrochemistry in the Fabrication and Characterization of Thin‐Film Solar Cells

Process R&D for CIS-Based Thin-Film PV: Final Technical Report, April 2002 - April 2005

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