Circadian Rhythms for Future Resilient Electronic Systems 2019
DOI: 10.1007/978-3-030-20051-0_4
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Circuit Techniques for BTI and EM Accelerated and Active Recovery

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Cited by 5 publications
(3 citation statements)
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“…1) BIAS TEMPERATURE INSTABILITY (BTI) -BTI relates to the transistor's threshold voltage (Vth) increase and the carrier mobility (µ) decrease [22]. This causes to increase in circuit delay, which eventually leads to timing faults.…”
Section: B Aging In Modern Integrated Circuitsmentioning
confidence: 99%
See 1 more Smart Citation
“…1) BIAS TEMPERATURE INSTABILITY (BTI) -BTI relates to the transistor's threshold voltage (Vth) increase and the carrier mobility (µ) decrease [22]. This causes to increase in circuit delay, which eventually leads to timing faults.…”
Section: B Aging In Modern Integrated Circuitsmentioning
confidence: 99%
“…This creates atomic lattice distortions, reduces conductivity, and potentially forms atomic voids. As a result, conductors typically become permanently damaged, eventually, cause to open circuit failure [22].…”
Section: ) Time-dependent Dielectric Breakdown (Tddbmentioning
confidence: 99%
“…Therefore, aggressive transistor downscaling causes unavoidable reliability issues in modern integrated circuits (IC). On the one hand, among all the reliability issues, the aging effects such as bias temperature instability (BTI) [1]- [3] and hot carrier injection (HCI) [4]- [6] manifest themselves as an increase in the absolute threshold voltage (V th ) and reduction in the carrier mobility (µ), thus gradually degrading circuit performance [7], [8]. On the other hand, there are booming demand of high reliability circuits in the markets of autonomous vehicles, space operations and biomedical electronics.…”
Section: Introductionmentioning
confidence: 99%