Circuit techniques for 1.5-V power supply flash memory

Otsuka, N.; Horowitz, Mark

doi:10.1109/4.604078

Cited by 64 publications

(21 citation statements)

References 14 publications

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“…However, current-type sense amplifiers usually dissipate larger current and power than voltage-type sense amplifiers [4][5][6], which is inapplicable to the low-power RFID transponders. Several voltage-type sense amplifiers have been reported to achieve the reduced NVM reading current [2,7,8], but they suffer from the reading reliability at low power supply and the high reading current.…”

Section: Introductionmentioning

confidence: 99%

A novel voltage-type sense amplifier for low-power nonvolatile memories

Kang

Wang

2010

Sci. China Inf. Sci.

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Based on the requirements of the nonvolatile memories embedded in ultra low-power RFID transponders, a novel voltage-type sense amplifier is designed to achieve both the reduced reading power and the improved reliability. Compared to the conventional voltage-type sense amplifier, the additional capacitor and current limiter are introduced in the novel voltage-type sense amplifier to reduce the reading power and to improve the reading reliability. The simulations show that the reading power and reliability of our voltage-type sense amplifier are superior to the previously reported voltage-type sense amplifier without speed loss but with only a little increased area. A testing chip has been fabricated based on 0.18 µm EEPROM technology to verify the design. The novel voltage-type sense amplifier can be implemented to the low-power nonvolatile memory embedded in RFID transponder. A novel voltage-type sense amplifier for low-power nonvolatile memories.

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Section: Introductionmentioning

confidence: 99%

A novel voltage-type sense amplifier for low-power nonvolatile memories

Kang

Wang

2010

Sci. China Inf. Sci.

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“…Conventionally, negative level shifters are designed with cross-coupled structure or feedback structure [4][5][6][7]. However, as V DD lowering below 1.5V, the contention between the pull-up transistors and pull-down transistors becomes very serious during the transient switching, leading to an increased switching delay and large dynamic power consumption [4]. Therefore, high-speed and low-power negative level shifters are of great importance in low voltage applications.…”

Section: Introductionmentioning

confidence: 99%

“…Negative level shifters are widely used in various applications such as standby mode activation in SoC systems [1], ESD protection [2], and especially in the flash memories for F-N tunneling erase operation of memory cells [3] [4]. Conventionally, negative level shifters are designed with cross-coupled structure or feedback structure [4][5][6][7]. However, as V DD lowering below 1.5V, the contention between the pull-up transistors and pull-down transistors becomes very serious during the transient switching, leading to an increased switching delay and large dynamic power consumption [4].…”

Section: Introductionmentioning

confidence: 99%

A novel high-speed and low-power negative voltage level shifter for low voltage applications

Liu

Wang

et al. 2010

Proceedings of 2010 IEEE International Symposium on Circuits and Systems

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A novel high-speed and low-power negative level shifter suitable for low voltage applications is presented. To reduce the switching delay and leakage current, a novel bootstrapping technique is designed for the level shifter. Furthermore, a pull-down driver is proposed to have high driving capability under different operation modes. The circuit has been designed in 130nm 1.5V/5V triple-well CMOS technology with a nominal power supply V DD of 1.5V and a negative voltage of -4.5V. Simulation results show that the switching delay and power consumption have been significantly reduced by roughly 62% and 65%, respectively. In addition, the proposed level shifter realizes a wide operation margin with a lower V DD compared to conventional implementations.

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“…As a result, current type SA is unacceptable to low power applications like RFID transponders. Consequently, lower current and power consumption made voltage type SA superior to current type SA, which is compatible in RFID tag EEPROM [9][10].…”

Section: Introductionmentioning

confidence: 99%

“…However, the circuit has some drawbacks: Tens of µA reference current is needed for reliability [10]. Thus, a large amount of read out current:…”

Section: Conventional Samentioning

confidence: 99%

Design and Implementation of a Low Supply Voltage Voltage Type Sense Amplifier with Low Current Consumption for RFID Transponder

et al. 2013

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Original scientific paperCurrent or voltage-type sense amplifier (SA) is the key element for sensing process of RFID transponder EEP-ROM. The performance of the EEPROM is influenced by the SA features like memory access time, power dissipation and the reliability. However, larger current or power dissipation put limitations on using current type SA with respect to voltage type SA. A low voltage SA with lower current consumption is presented in this research work, which is compatible with the low power applications like RFID transponder EEPROM. In this research, 0.18µm process is employed to design the low voltage SA with lower power consumption. The simulated results of the output showed that voltage type SA is able to operate under a low power supply voltage (VDD). In addition, only 32 µA current is dissipated by the modified voltage type SA during read period. Moreover, the proposed voltage type SA provides better reliability than the circuits presented in other research papers. Key words: Transponder, EEPROM, RFID, Sense amplifierDizajn i implementacija naponskog mjernog pojačala za RFID transponder s niskim naponom napajanja i malom potrošnjom struje. Strujno ili naponsko mjerno pojačalo (MP) je ključni element očitanja RFID transpondera s EEPROM-om. Na učinak EEPROM-a utječu svojstva pojačala kao što su vrijeme pristupa memoriji, energetski gubici i pouzdanost. Veliki gubici struje i energije ograničavaju mogućnost korištenja strujnog mjernog pojačala u odnosu na naponsko. U ovom radu prikazano je niskonaponsko mjerno pojačalo s malom potrošnjom energije koje je prikladno za korištenje kod RFID transpondera s EEPROM-om. Koristi se proces od 0.18µm za dizajniranje niskonaponskog pojačala male potrošnje. Simulacije izlaznog napona su pokazale da naponsko mjerno pojačalo može raditi s niskim naponom napajanja. Tijekom vremena očitanja na modificiranom naponskom pojačalu troši se samo 32µA struje. Predloženo naponsko mjerno pojačalo ima bolju pouzdanost od onih prikazanih u drugimčlancima.

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Circuit techniques for 1.5-V power supply flash memory

Cited by 64 publications

References 14 publications

A novel voltage-type sense amplifier for low-power nonvolatile memories

A novel voltage-type sense amplifier for low-power nonvolatile memories

A novel high-speed and low-power negative voltage level shifter for low voltage applications

Design and Implementation of a Low Supply Voltage Voltage Type Sense Amplifier with Low Current Consumption for RFID Transponder

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