Circuit modeling of ultra‐broadband terahertz absorber based on graphene array periodic disks

Aghaee, Toktam; Orouji, Ali A.

doi:10.1002/jnm.2586

Cited by 35 publications

(21 citation statements)

References 44 publications

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“…In this article, a temperature of T = 300 K (room temperature) and τ = 0.5 ps are assumed. [11][12][13][14][15][16][17][18][19][20][21][22][23][24][25] Here in this work, a modified circuit model approach is used to describe layers exploiting developed circuit representation in Reference 26. According to References 26-30, periodic arrays of Nano-disks can be modeled via passive circuit elements while physical features and technology dependents parameters are embedded in-circuit elements.…”

Section: Proposed Configurationmentioning

confidence: 99%

“…According to Reference 27, periodic arrays of disks and graphene sheets can be modeled as a RLC circuit element like Equations (10) and (11).…”

Section: Proposed Configurationmentioning

confidence: 99%

“…Finally, a continuous graphene sheet is placed on top of the whole device to enhance total absorption. Compared to conventional designs in References 1‐12, two first layers benefit from an extra bias, which leads to more degree of freedom to adjust input impedance using external control parameters (gate biasing).…”

Section: Proposed Configurationmentioning

confidence: 99%

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Highly tunable multi‐band THz absorber with circuit model representation using multi‐bias scheme

Aghaee

Orouji

2020

Int J Numerical Modelling

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Utilizing a double bias scheme for graphene patterns as a single layer, a THz meta-surface structure is proposed. The structure includes two dual bias layers and a graphene continuous sheet on top. So five possible biases are available which lead to a highly tunable absorption response. All consisting parts are modeled via passive circuit elements to obtain whole device input impedance. Then impedance matching theory is used to investigate potential frequencies for perfect absorption. Also, ample simulations are performed to show the validity and accuracy of theoretical descriptions. According to the simulation results in the conventional finite element method as a reference approach is in acceptable agreement with the developed circuit model approach. The proposed structure shows nearly perfect absorption in 5, 6, 7, and 8 THz with absorption rate over 90%. Such a tunable reaction is in incredible requests in optical systems and has various applications in structuring sensors, modulators, and photonic functions.

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Section: Proposed Configurationmentioning

confidence: 99%

“…According to Reference 27, periodic arrays of disks and graphene sheets can be modeled as a RLC circuit element like Equations (10) and (11).…”

Section: Proposed Configurationmentioning

confidence: 99%

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Highly tunable multi‐band THz absorber with circuit model representation using multi‐bias scheme

Aghaee

Orouji

2020

Int J Numerical Modelling

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“…In addition to active and passive device and circuit design, devices for emerging applications like THz sensors and THz absorbers are reported by Cheng et al 30 and Aghaee and Orouji. 31 Niu et al 32 presented a 220 GHz signal monitoring system, where the front end of the receiver consists of a subharmonic mixer and a tripler based on Schottky diodes. The proposed method can be useful for high-performance millimeterwave and THz systems.…”

mentioning

confidence: 99%

“…Other technologies like GaAs MMIC, hybrid integrated circuits, and electric vacuum devices are also presented by Li et al, Yang et al, and Wang et al, respectively. In addition to active and passive device and circuit design, devices for emerging applications like THz sensors and THz absorbers are reported by Cheng et al and Aghaee and Orouji . Niu et al presented a 220 GHz signal monitoring system, where the front end of the receiver consists of a subharmonic mixer and a tripler based on Schottky diodes.…”

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confidence: 99%

Guest Editorial for the special issue on devices and circuits for millimeter‐wave and THz applications

2020

Int J Numerical Modelling

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Wireless communication, precision guidance, imaging, internet of things, and biomedical applications in the millimeter-wave and THz bands promise new functionalities that cannot be provided by present systems. Different from present design methods, new design methods are required to support the development of high-performance millimeterwave and THz band devices and systems. These new design methods should incorporate new materials, advanced processing and technologies, and can accurately account for multi-physics coupling effects. This special issue collects 32 papers including 20 papers on active device modeling, nine papers on passive device and circuit modeling and design techniques, and three papers on emerging system applications.Active devices for state-of-the-art millimeter-wave and THz systems discussed in this special issue include Indium phosphide (InP) heterojunction bipolar transistors (HBTs), Indium Gallium Phosphide (InGaP)/Gallium arsenide (GaAs) HBTs, Gallium nitride (GaN) high electron mobility transistors (HEMTs), GaAs HEMTs, complementary metal oxide silicon (CMOS) transistors, and electric vacuum devices. The discussion covers the important device features of high frequency, high power, low noise, and high efficiency. As the frequency goes up to the millimeter-wave and THz bands, advanced physical-based or SPICE-like equivalent circuit and compact models are needed. As a solid-state device, InP transistor can operate at a very high frequency by taking advantages of extremely high electron mobility. Zhang et al 1 presented a review on the compact modeling of InP HBTs for THz integrated circuits. Useful improvements made for HBTs are reported on the analysis of intrinsic base resistances by Chen et al, 2 on large-signal models by Hu et al, 3 on the determination of cutoff and maximum oscillation frequencies by Zhang and Gao, 4 and on the thermal resistance calculation by Wang et al. 5 Due to a high breakthrough voltage and saturation velocity, GaN HEMTs is very promising for millimeter-wave solid-state power amplifiers. Chen et al 6 reported an improved quasi-physics zone division large-signal model to account for electro-thermal effects, which is valid for the ambient temperature range of 245 to 390 K. Physical parameters' effects, reliable parameter extraction, and dynamic thermal impedance extraction for the equivalent circuit models of GaN HEMTs are discussed by Mi et al, 7 Chen et al, 8 and Wang et al, 9 respectively. The modeling of emerging devices is also presented by Chen et al 10 for GaN-on-diamond HEMTs and Zhang et al 11 for AlGaN/GaN fin-shaped HEMTs, which may be interesting for next generation devices. Accurate modeling of transistors' noise performance is important for low-noise applications. Jarndal et al 12 developed a noise model for GaN HEMTs and Caddemi et al 13 reported an improved scalable parameter extraction method for GaAs HEMTs. CMOS transistor is very competitive in millimeter-wave and THz circuits due to its mature process. Bashir et al 14 presented a scalable small-...

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Dielectric‐Based Metamaterials for Near‐Perfect Light Absorption

Wang,

Qin,

Duan

et al. 2024

Adv Funct Materials

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The emergence of metamaterials and their continued prosperity have built a powerful working platform for accurately manipulating the behavior of electromagnetic waves, providing sufficient possibility for the realization of metamaterial absorbers with outstanding performance. However, metamaterial absorbers composed of metallic materials typically possess many unfavorable factors, such as non‐adjustable absorption, easy oxidation, low‐melting, and expensive preparation costs. The selection of dielectric materials provides excellent alternatives due to their remarkable properties, thus dielectric‐based metamaterial absorbers (DBMAs) have attracted much attention. To promote breakthroughs in DBMAs and guide their future development, this work systematically and deeply reviews the recent research progress of DBMAs from four different but progressive aspects, including physical principles; classifications, material selections and tunable properties; preparation technologies; and functional applications. Five different types of theories and related physical mechanisms, such as Mie resonance, guided‐mode resonance, and Anapole resonance, are briefly outlined to explain DBMAs having near‐perfect absorption performance. Mainstream material selections, structure designs, and different types of tunable DBMAs are highlighted. Several widely utilized preparation methods for customizing DBMAs are given. Various practical applications of DBMAs in sensing, stealth technology, solar energy absorption, and electromagnetic interference suppression are reviewed. Finally, some key challenges and feasible solutions for DBMAs’ future development are provided.

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Circuit modeling of ultra‐broadband terahertz absorber based on graphene array periodic disks

Cited by 35 publications

References 44 publications

Highly tunable multi‐band THz absorber with circuit model representation using multi‐bias scheme

Highly tunable multi‐band THz absorber with circuit model representation using multi‐bias scheme

Guest Editorial for the special issue on devices and circuits for millimeter‐wave and THz applications

Dielectric‐Based Metamaterials for Near‐Perfect Light Absorption

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