CIGS formation by high temperature selenization of metal precursors in H2Se atmosphere

Liang, Haifan; Avachat, Upendra; Liu, Wei; Duren, Jeroen van; Le, M.

doi:10.1016/j.sse.2012.05.055

Cited by 43 publications

(15 citation statements)

References 16 publications

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“…In this paper we report the synthesis of BaZrS3 thin films at temperatures as low as 500 ℃, which is comparable to the processing temperature of copper indium gallium selenide (CIGS) solar cells [31,32]. This is achieved by changing the chemical reaction pathway from sulfurization of oxide perovskites to crystallization of pulsed laser deposited amorphous BaZrSx films.…”

Section: Introductionmentioning

confidence: 99%

Chalcogenide perovskite BaZrS3 thin-film electronic and optoelectronic devices by low temperature processing

Wei

Zheng

et al. 2021

Nano Energy

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Section: Introductionmentioning

confidence: 99%

Chalcogenide perovskite BaZrS3 thin-film electronic and optoelectronic devices by low temperature processing

Wei

Zheng

et al. 2021

Nano Energy

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“…Cross sections SEM of the absorber layer selenized at 450 o C and 575 o C are shown in Figure 2.21,Figure 2.22 shows the XRD spectra of the (112) peak of these two absorber layers. By increasing the selenization temperature, the little impurity peak at 27.01 o C disappeared and (112) peak is higher and the FWHM of the (112) peak becomes narrower, indicating better crystallinity and improved compositional homogeneity[69].Selenization of nanocrystal films sometimes also produces bi-layer structures, which have a large-grained layer on the top and a fine-grained layer at the bottom[60,70], like what is shown in previousFigure 2 20…”

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confidence: 52%

Development of selenization/sulfurization-free CuIn(S,Se)2 for thin film solar cells applications

Wang¹

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Tin have helped me in one v way or another throughout the way to complete this thesis. Their friendship and assistance have really meant a lot to me and I owe them my heartfelt appreciation. My greatest thanks to my family, my parents, who have always supported me in everyway since I was born and I am really grateful for all the sacrifices they have made on my behalf. Special thanks to my beloved husband Mr Wang Kaiwen, since we met each other at 17, his love and encouragement have allowed me to overcome hard times along this journey.

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“…In general, co-evaporation and sputtering processes for growing CIGS thin films both include the metallic precursor deposition of Cu–In–Ga alloy and the subsequent two-step selenization process, which consists of an initial low temperature selenization in H 2 Se atmosphere followed by a high temperature annealing in inert gas. By precisely controlling the parameters of selenization, it has been demonstrated that homogeneous CIGS films with tunable in-depth Ga distribution can be obtained, such that the open-circuit voltage ( V oc ) of the devices can be increased due to the formation of the Ga-rich surface layer [ 7 , 8 ].…”

Section: Introductionmentioning

confidence: 99%

A Comprehensive Study of One-Step Selenization Process for Cu(In1−x Ga x )Se2 Thin Film Solar Cells

et al. 2017

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In this work, aiming at developing a rapid and environmental-friendly process for fabricating CuIn1−xGaxSe2 (CIGS) solar cells, we demonstrated the one-step selenization process by using selenium vapor as the atmospheric gas instead of the commonly used H2Se gas. The photoluminescence (PL) characteristics indicate that there exists an optimal location with superior crystalline quality in the CIGS thin films obtained by one-step selenization. The energy dispersive spectroscopy (EDS) reveals that the Ga lateral distribution in the one-step selenized CIGS thin film is intimately correlated to the blue-shifted PL spectra. The surface morphologies examined by scanning electron microscope (SEM) further suggested that voids and binary phase commonly existing in CIGS films could be successfully eliminated by the present one-step selenization process. The agglomeration phenomenon attributable to the formation of MoSe2 layer was also observed. Due to the significant microstructural improvement, the current–voltage (J-V) characteristics and external quantum efficiency (EQE) of the devices made of the present CIGS films have exhibited the remarkable carrier transportation characteristics and photon utilization at the optimal location, resulting in a high conversion efficiency of 11.28%. Correlations between the defect states and device performance of the one-step selenized CIGS thin film were convincingly delineated by femtosecond pump-probe spectroscopy.

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CIGS formation by high temperature selenization of metal precursors in H2Se atmosphere

Cited by 43 publications

References 16 publications

Chalcogenide perovskite BaZrS3 thin-film electronic and optoelectronic devices by low temperature processing

Chalcogenide perovskite BaZrS3 thin-film electronic and optoelectronic devices by low temperature processing

Development of selenization/sulfurization-free CuIn(S,Se)2 for thin film solar cells applications

A Comprehensive Study of One-Step Selenization Process for Cu(In1−x Ga x )Se2 Thin Film Solar Cells

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