Chromium sulfide halide monolayers: intrinsic ferromagnetic semiconductors with large spin polarization and high carrier mobility

Guo, Yilv; Zhang, Shaodong; Yuan, Shijun; Wang, Qingqing; Wang, Jinlan

doi:10.1039/c8nr06368k

Cited by 130 publications

(117 citation statements)

References 48 publications

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“…The ongoing research on emerging 2D ferromagnetic materials mainly follows two directions: (i) the pursuit of high‐performance vdW ferromagnets and (ii) the application of experimentally known vdW ferromagnets . The former aims to pursue new vdW ferromagnetic materials possessing superior properties, such as high‐mobility ferromagnetic semiconductors, half metals with large spin gaps, and robust ferromagnets with high Curie temperature . The latter focuses on the rational control of atom‐thick vdW ferromagnets to accomplish better performance in nanodevices, among which electrical control, via electric field and electrostatic doping, has been verified to be an effective strategy to modulate atomically thin vdW ferromagnets .…”

Section: Introductionmentioning

confidence: 99%

Nonvolatile Electrical Control and Heterointerface‐Induced Half‐Metallicity of 2D Ferromagnets

Zhao

Zhang

Yuan

et al. 2019

Adv Funct Materials

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119

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Electrical control of atom-thick van der Waals (vdW) ferromagnets is a key toward future magnetoelectric nanodevices; however, state-of-the-art control approaches are volatile. In this work, introducing ferroelectric switching as an aided layer is demonstrated to be an effective approach toward achieving nonvolatile electrical control of 2D ferromagnets. For example, when a ferromagnetic monolayer CrI 3 and ferroelectric MXene Sc 2 CO 2 come together into multiferroic heterostructures, CrI 3 is controlled by polarized states P↑ and P↓ of Sc 2 CO 2 . P↑ Sc 2 CO 2 does not change the semiconducting nature of CrI 3 , but surprisingly P↓ Sc 2 CO 2 makes CrI 3 half-metallic. Nonvolatility of the electrical switching between two oppositely ferroelectric polarized states, therefore, indirectly enables nonvolatile electrical control of CrI 3 between ferromagnetic semiconductor and half-metal. The heterointerfaceinduced half-metallicity in CrI 3 is intrinsic without resorting to any chemical functionalization or external physical modification, which is rather beneficial to the practical application. This work paves the way for nonvolatile electrical control of 2D vdW ferromagnets and applications of CrI 3 in half-metal-based nanospintronics.

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Section: Introductionmentioning

confidence: 99%

Nonvolatile Electrical Control and Heterointerface‐Induced Half‐Metallicity of 2D Ferromagnets

Zhao

Zhang

Yuan

et al. 2019

Adv Funct Materials

Self Cite

119

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show abstract

“…With FM state as the initial magnetic configuration, through an energy minimization and electron density optimization process, we identified 46 potential magnetic semiconductors (see Supplementary Table 1). 2D FM insulators MnNX and CrCX (X = Cl, Br, I; C = S, Se, Te) have been predicted in previous work [45][46][47][48] . Our comprehensive study puts this 2D compound family as a great platform for the discovery and design of quantum materials based on 2D magnetic heterojunctions.…”

Section: Prediction Of 2d Magnetic Insulators In Mxy Compoundsmentioning

confidence: 79%

Quantum anomalous Hall effect in two-dimensional magnetic insulator heterojunctions

Pan¹,

Yu²,

Zhang³

et al. 2020

npj Comput Mater

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Recent years have witnessed tremendous success in the discovery of topological states of matter. Particularly, sophisticated theoretical methods in time-reversal-invariant topological phases have been developed, leading to the comprehensive search of crystal database and the prediction of thousands of topological materials. In contrast, the discovery of magnetic topological phases that break time reversal is still limited to several exemplary materials because the coexistence of magnetism and topological electronic band structure is rare in a single compound. To overcome this challenge, we propose an alternative approach to realize the quantum anomalous Hall (QAH) effect, a typical example of magnetic topological phase, via engineering two-dimensional (2D) magnetic van der Waals heterojunctions. Instead of a single magnetic topological material, we search for the combinations of two 2D (typically trivial) magnetic insulator compounds with specific band alignment so that they can together form a type-III broken-gap heterojunction with topologically non-trivial band structure. By combining the data-driven materials search, first-principles calculations, and the symmetry-based analytical models, we identify eight type-III broken-gap heterojunctions consisting of 2D ferromagnetic insulators in the MXY compound family as a set of candidates for the QAH effect. In particular, we directly calculate the topological invariant (Chern number) and chiral edge states in the MnNF/MnNCl heterojunction with ferromagnetic stacking. This work illustrates how data-driven material science can be combined with symmetry-based physical principles to guide the search for heterojunction-based quantum materials hosting the QAH effect and other exotic quantum states in general.

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“…[ 100,106 ] In A‐type antiferromagnets, the spin couple ferromagnetically within each layer and couple antiferromagnetically between adjacent layers. Many monolayer counterpart of bulk A‐type antiferromagnets has been predicted to be ferromagnetic, [ 91,93,107,108 ] which is a manifestation of weak interlayer vdW coupling. The evolution from easy‐plane anisotropy for bulk A‐type antiferromagnets to uniaxial out of plane anisotropy upon reduction to monolayer is often predicted, such as the case of CrCl 3 , [ 93 ] previously mentioned CoCl 2 and CoBr 2 .…”

Section: Low Dimensional Theory For Magnetizationmentioning

confidence: 99%

Prospects and Opportunities of 2D van der Waals Magnetic Systems

et al. 2020

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The existence of spontaneous magnetization in low dimensional magnetic systems has attracted intensive studies since the early 60s and research remains very active even now. Only recently, magnetic van der Waals (vdW) systems down to a few layers have been broadly discussed for their magnetic order ground states at finite temperature. The naturally inherited layered structure of the vdW magnetic systems possessing onsite magnetic anisotropy from band electrons can suppress the long-range fluctuations. This provides an excellent vehicle to study the transition of magnetism to 2D limits both theoretically and experimentally. Here the current status of 2D vdW magnetic system and its potential applications are briefly summarized and discussed.

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Chromium sulfide halide monolayers: intrinsic ferromagnetic semiconductors with large spin polarization and high carrier mobility

Cited by 130 publications

References 48 publications

Nonvolatile Electrical Control and Heterointerface‐Induced Half‐Metallicity of 2D Ferromagnets

Nonvolatile Electrical Control and Heterointerface‐Induced Half‐Metallicity of 2D Ferromagnets

Quantum anomalous Hall effect in two-dimensional magnetic insulator heterojunctions

Prospects and Opportunities of 2D van der Waals Magnetic Systems

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