Chromium Fluoride Attenuated Phase-Shifting  Mask for Argon Fluoride  Excimer Laser Lithography

Ushioda, Jun; Seki, Y.; Maeda, Katsumi; Ohfuji, Takeshi; Tanabe, Hiroyoshi

doi:10.1143/jjap.35.6356

Cited by 11 publications

(6 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…1 Attenuated phase-shifting masks ͑APSMs͒ overcome the phase conflict problems of traditional PSMs, and can be used for any arbitrary mask patterns. [2][3][4] Recently, Zr, Ta, Cr, and composite materials of silicon dioxide with metal oxide-based films have been reported to work at 157 nm. There are many material candidates which are appropriate for a single-layer structure as shown in Fig.…”

Section: Introductionmentioning

confidence: 99%

Fabry–Pérot structures for attenuated phase-shifting mask application in ArF and F2 lithography

Chen

Lee

et al. 2003

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

Articles you may be interested inHigh reflectance of reflective-type attenuated-phase-shifting masks for extreme ultraviolet lithography with high inspection contrast in deep ultraviolet regimes Correlation between the chemical compositions and optical properties of AlSi x N y embedded layer for attenuated phase-shifting mask in 193 nm and the modification of the R-T method for measuring n and kWe demonstrate a structure for an attenuated phase-shifting mask ͑APSM͒ which is based on a three-layer Fabry-Pérot structure for ArF ͑193 nm͒ and F 2 (157 nm) excimer laser based lithographies. The APSM structure is composed of a metal/dielectric/metal stack. The optical characteristics of the Fabry-Pérot structure meet the following requirements: 180°phase shift, transmittance in the range of 4%-15%, reflectance of less than 10% at the exposure wavelength, and high inspection contrast at the inspection wavelength. Common dielectric and metal materials, such as chromium, tungsten, amorphous silicon, silicon dioxide, aluminum oxide, and aluminum nitride films, can be used to construct the Fabry-Pérot structure. The top metal layer can also prevent charge accumulation during electron-beam writing.

show abstract

Section: Introductionmentioning

confidence: 99%

Fabry–Pérot structures for attenuated phase-shifting mask application in ArF and F2 lithography

Chen

Lee

et al. 2003

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

show abstract

“…Since the phase-shifting idea in mask technology was first introduced by Levenson et al 5) in 1982, PSMs have been investigated and developed extensively. [6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24] PSM requirements are changing due to the development of other related technologies. First, it became possible to use a high-transmittance attenuated PSM (HT-Att-PSM).…”

Section: Introductionmentioning

confidence: 99%

Simulation of Optical Constants Range of High-Transmittance Attenuated Phase-Shifting Masks Used in KrF Laser and ArF Laser

Kim

Moon

Kim

et al. 2000

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

Phase-shifting masks (PSMs) have provided us a breakthrough in the future semiconductor industry by extending lithography further to the submicrometer order. PSMs have been used over the past several years, and their requirements have changed due to the development of semiconductor technology. We investigated high-transmittance attenuated PSMs (HT-Att-PSMs) that satisfy the requirements of 20 ± 5% transmittance and 180 • phase shift at the exposure wavelength and less than 40% transmittance at the inspection wavelength. Regarding the wavelength, we targeted the inspection wavelength of 248 nm for ArF laser (exposure wavelength of 193 nm) HT-Att-PSM, and 365 nm for KrF laser (exposure wavelength of 248 nm) HT-Att-PSM. In this study, we developed refractive index-extinction coefficient-thickness (n-k-d) charts showing optimum optical constant ranges for HT-Att-PSM using the matrix method. The simulation was verified by comparing calculated transmittance data with measured ones.

show abstract

“…1 Many embedded materials for AttPSM blank for ArF 193 nm lithography have been reported, among them, MoSiO, 2 SiN, 3,4 ZrSiO, 5,6 TaSiO, 7 CrAlO, 8 and CrF, 8,9 are more important and most studied.…”

Section: Introductionmentioning

confidence: 99%

Correlation between the chemical compositions and optical properties of AlSixNy embedded layer for attenuated phase-shifting mask in 193 nm and the modification of the R–T method for measuring n and k

Lin

Loong

2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

The formation and variation of AlN, Si 3 N 4 , and nitride compositions in AlSi x N y (xϳ0.31, y ϳ0.51) embedded material have been shown to correlate with its optical properties. The increasing content of AlN, Si 3 N 4 , and nitrides will increase n and decrease k of AlSi x N y . A simple and effective correction of measured reflectance R% and transmittance T% based on scalar scattering theory has been applied to the R -T method for determining n and k of embedded layers for 193 nm lithography masks. A 0.2 m etched pattern of an AlSi x N y embedded layer on an oxide/Si wafer substrate was successfully fabricated.

show abstract

Chromium Fluoride Attenuated Phase-Shifting Mask for Argon Fluoride Excimer Laser Lithography

Cited by 11 publications

References 9 publications

Fabry–Pérot structures for attenuated phase-shifting mask application in ArF and F2 lithography

Fabry–Pérot structures for attenuated phase-shifting mask application in ArF and F2 lithography

Simulation of Optical Constants Range of High-Transmittance Attenuated Phase-Shifting Masks Used in KrF Laser and ArF Laser

Correlation between the chemical compositions and optical properties of AlSixNy embedded layer for attenuated phase-shifting mask in 193 nm and the modification of the R–T method for measuring n and k

Contact Info

Product

Resources

About