Chromium compensated gallium arsenide detectors for X-ray and γ-ray spectroscopic imaging

Study of the microstructure information of GaAs epilayers grown on silicon substrate using synchrotron radiation

“…Note that the intensity of the synchrotron radiation source in our experiments was about 25 mW mm À2 . GaAs is a radiation-hard material (Owens & Peacock, 2004) which makes it a potential candidate for the development of detectors for high-flux X-ray imaging applications (Lozinskaya et al, 2014;Veale et al, 2014). No structural change in the sample was observed after exposure to the synchrotron radiation.…”

Beta detection of strontium-90 and the potential for direct in situ beta detection for nuclear decommissioning applications

“…As the electron mobility of the GaAs is approximately 6 times greater than Si, this should allow for a device which functions over a shorter time scale. [51]. This defect has presented a stumbling block in the use of GaAs photodiodes in sensitive applications, such as medical imaging and radiation detection.…”

“…In comparison with gas-filled or scintillation detectors, semiconductors have a lower energy requirement for charged particle detection resulting in superior energy resolution[48]. They now have a number of applications in medical imaging, dosimetry, power generation and high-energy radiation experiments[49,50,51,52].In contrast to PN-junction semiconductors, PIN photodiodes have a large intrinsic layer separating the p and n-type layers.Figure 5illustrates a simplified configuration of a PIN photodiode and its interaction with ionising radiation. As radiation enters the intrinsic layer, it disrupts electron-hole pairs which are swept up by a reverse-biased voltage and the resulting current is measured.…”

“…A proof of concept demonstration of X-ray imaging with a GaAs sensor[51].tion of individual pixels were found to range from approximately 290 eV for a 5.9 keV beam and 780 eV for a keV beam. These results were obtained at room temperature, and the investigations into variation of resolution with temperature found a 10% gain in resolution as the device was cooled to 5 • C with negligible improvements at cooler temperatures.The results found here can be contrasted with the previously cited studyinto chromium compensated GaAs.…”

Dark Current Compensation and Sensitivity Adjustment on Gallium Arsenide Linear Array Detector for X-Ray Imaging

“…The key unit of the linear array is a module, consisting of 128 sensitive elements of gallium arsenide chromium doped resistive type material which was designed, manufactured and assembled in Siberian Physical-Technical Institute of Tomsk State University [9] [10]. The pitch size of a single element can be 100 × 100 μm 2 to the x-ray exposure, moreover the sensitivity of pads and strips vary not only from one module to another but also inside each module.…”