2016
DOI: 10.1016/j.orgel.2016.04.024
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Chlorobenzene vapor assistant annealing method for fabricating high quality perovskite films

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Cited by 39 publications
(21 citation statements)
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“…Huang et al revealed a correlation between V OC and grain boundaries, and we also attribute the increasing V OC in GdF 3 –aminobutanol‐based device to the reduction of grain boundaries . Likewise, the larger grain size could efficiently reduce grain boundaries which is beneficial for the suppression of charge carrier recombination, resulting in an increase of FF and J SC …”
supporting
confidence: 54%
“…Huang et al revealed a correlation between V OC and grain boundaries, and we also attribute the increasing V OC in GdF 3 –aminobutanol‐based device to the reduction of grain boundaries . Likewise, the larger grain size could efficiently reduce grain boundaries which is beneficial for the suppression of charge carrier recombination, resulting in an increase of FF and J SC …”
supporting
confidence: 54%
“…The peak position of PL spectrum increases from 768 to 773 nm when the MAI concentration increases from 10 to 40 mg/mL. The redshift might be associated with the reaction of PbI 2 and MAI [ 21 ]. As the PbI 2 film is reacted with the MAI solution and formed the MAPbI 3 perovskite film, the band gap is shifted toward 1.55 eV.…”
Section: Resultsmentioning
confidence: 99%
“… 32 Fang et al reported high quality CH 3 NH 3 PbI 3− x Cl x perovskite films using chlorobenzene (CB) vapor post-annealing. 36 They found that this method had a positive effect on the interfacial contact between the perovskite film and the upper PCBM film. Hybrid PSCs with planar heterojunctions fabricated by this method demonstrated a reproducible optimal PCE of 14.79% and an average PCE of 13.40%, which were better than those when thermally annealed.…”
Section: Introductionmentioning
confidence: 99%