Chlorine-related hot photoluminescence in CdTe

Tkachuk, P. N.; Tkachuk, V. I.; Korbutjak, N.D; Raransky, A.N.; Korbutyak, D. V.; Krylyuk, Sergiy

doi:10.1016/s0022-0248(98)80111-5

Cited by 4 publications

(4 citation statements)

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“…Since the NWs have diameters in the range 100-300 nm, quantum confinement effects are not considered to be responsible. The origins of above-gap emission from CdTe are discussed by Tkachuk [35] and include phonon absorption (LO, TO and TA), excitonic and indirect transitions-a variety of such processes are possible. Tkachuk specifically attributes emission at 1.614 eV to an anti-stokes process involving the free exciton and a TO phonon.…”

Section: 31mentioning

confidence: 99%

Microstructure and point defects in CdTe nanowires for photovoltaic applications

Williams¹,

Halliday²,

Mendis³

et al. 2013

Nanotechnology

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Publisher's copyright statement:This is an author-created, un-copyedited version of an article accepted for publication in Nanotechnology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://dx.doi.org/10.1088/0957-4484/24/13/135703Additional information: Use policyThe full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-pro t purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders.Please consult the full DRO policy for further details. AbstractDefects in Au-catalysed CdTe nanowires VLS-grown on polycrystalline underlayers have been critically evaluated. Their low-temperature photoluminescence spectra were dominated by excitonic emission with rarely observed above-gap emission also being recorded. While acceptor bound exciton lines due to monovalent metallic impurities (Ag, Cu or Na) were seen, only deeper, donor acceptor pair emission could be attributed to the Au contamination that is expected from the catalyst. Annealing under nitrogen acted to enhance the single crystal-like PL emission, whilst oxidising and reducing anneals of the type that are used in solar cell device processing caused it to degrade. The incidence of stacking faults, polytypes and twins was related only to the growth axes of the wires (<111> 50%, <112> 30% and <110> 20%), and was not influenced by annealing. The potential electrical activity of the point and extended defects, and the suitability of these nanowire materials (including processing steps) for solar cell applications, is discussed. Overall they have quality that is superior to that of thin polycrystalline films, although questions remain about recombination due to Au.

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Section: 31mentioning

confidence: 99%

Microstructure and point defects in CdTe nanowires for photovoltaic applications

Williams¹,

Halliday²,

Mendis³

et al. 2013

Nanotechnology

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“…Both spectra (figure 1, curves 2 and 3) show a weak free exciton emission that is clearly seen in the comparative spectra in figure 2 (curves 2 and 3). The new feature (X) at 1.597 eV (figure 1, curve 3) is attributed to the free exciton transitions [15,19,20]. It should be noted that laser treatment of both types of sample, i.e., with and without depositing an In film, results in a decrease in the PL signal in the bound exciton region, while the integral PL intensity in the free exciton emission region increases (figure 2, curves 2 and 3).…”

Section: Analysis Of the Exciton Emission Regionmentioning

confidence: 96%

“…In the exciton emission region of the PL spectrum of the initial CdTe crystal, two close lines are observed (figure 1, curve 1). It is generally accepted that these lines are due to the recombination of excitons bound to shallow impurity or defect centres such as neutral acceptors (a line around 1.590 eV) and neutral donors (a line around 1.594 eV) [2,6,9,10,[13][14][15][16][17][18][19][20]. A prominent line at 1.590 eV designated as (A 0 X) is attributed to the decay of an exciton bound to a neutral acceptor originating either from the cadmium vacancy (V Cd ) or from a complex including V Cd , where one of the four nearest Te neighbours is replaced by Cl as (V Cd -Cl Te ) [2,6,16], or in the form (V Cd -2Cl Te ) [17].…”

Section: Analysis Of the Exciton Emission Regionmentioning

confidence: 99%

“…The dominant component in the exciton band of the PL spectrum of the laser-only irradiated crystal becomes the (D 0 X) line, while a peak of the (A 0 X) line decreases and very weakly appears. Between these two peaks, another feature at 1.592 eV comes into view, and this is associated with recombination of an exciton bound to an ionized donor (D + X) [2,16,19]. Probably, the appearance of the (D + X) line in (111) oriented crystals is due to Te Cd antistructural defects exhibiting donor properties [19] because of the enrichment of the surface layer with Te that has been usually observed in CdTe under irradiation by various lasers [6,[11][12][13][14].…”

Section: Analysis Of the Exciton Emission Regionmentioning

confidence: 99%

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Influence of laser irradiation and laser-induced In doping on the photoluminescence of CdTe crystals

Gnatyuk

Aoki

Niraula

et al. 2003

Semicond. Sci. Technol.

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By investigating the photoluminescence (PL), we have studied laser-induced doping and defect formation in high-resistivity Cl-compensated p-like CdTe crystals coated with and without a thin In dopant film. A detailed analysis of the PL spectra has been performed to discuss the laser-stimulated modification of the defect structure in CdTe crystals subjected to irradiation with nanosecond KrF excimer laser pulses with the energy density above the melting threshold. In particular, laser irradiation increased V Cd as a result of the dissociation of (Cd-X) complexes and laser desorption of Cd atoms. Laser-stimulated diffusion of In atoms at Cd vacancies provided doping of CdTe crystals. Fast freezing of a large number of the point defects In Cd impeded the formation of compensating acceptors (V Cd -In Cd ). This allows us to suppress the self-compensation mechanism, and to introduce and activate the In impurity into a thin surface layer of the crystals without damaging of the structure and properties of the underlying region.

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