Chlorine passivation of grain boundaries in cadmium telluride solar cells

Watts, Michael J.; Hatton, P. D.; Smith, Roger; Fiducia, Tom; Abbas, Ali; Greenhalgh, Rachael; Walls, John M.; Goddard, Pooja

doi:10.1103/physrevmaterials.5.035403

Cited by 10 publications

(11 citation statements)

References 20 publications

(45 reference statements)

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“…Cadmium tellurium (CdTe) and copper indium gallium selenide are other majorly used absorbers for PV cells. They have high efficiency of about 22% [9,10]. Both are inferior to GeSe because indium and gallium are rare earth metals, and cadmium is highly toxic.…”

Section: Introductionmentioning

confidence: 99%

Investigation of Different Configurations in GeSe Solar Cells for Their Performance Improvement

Sairam

Singh

Mamta

et al. 2023

Journal of Nanomaterials

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Thin-film-based photovoltaics offer affordable solar panels (high energy output per unit cost). Various materials have been used for thin-film solar cells, and still, new materials are being tested. In this work, the overall performance of GeSe is enhanced theoretically from a generic solar structure to a configuration that yields a whopping 33.12% efficiency along with an open circuit voltage of 1.04 V by optimizing various active layers using solar cell capacitance simulator SCAPS. The results have been explained most simply, utilizing the physics behind introducing hole transport layers in solar cells. The work also shows how certain contradictions in parameter values in the literature of GeSe can influence the cell’s performance. The result shows why the substrate structure is better than the superstrate structure. Most of the reported results are on superstrate structure, which might have caused poor performance in previously experimentally produced GeSe solar cells.

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Section: Introductionmentioning

confidence: 99%

Investigation of Different Configurations in GeSe Solar Cells for Their Performance Improvement

Sairam

Singh

Mamta

et al. 2023

Journal of Nanomaterials

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“…1 Organotellurium ligands, in particular, possess unique chemical properties that make them valuable building blocks for a wide range of applications, including catalysis, 2 materials science, 3 and electronics. 4…”

Section: Introductionmentioning

confidence: 99%

Unravelling the role of triisopropylphosphane telluride in Ag(i) complexes

Pérez-Sánchez,

Ceamanos,

Herrera

et al. 2023

Inorg. Chem. Front.

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“…GBs have been shown to have inherently detrimental effects on the performance of polycrystalline solar cells, such as polycrystalline silicon, CdTe, and CIGS solar cells. − Studies correlating morphology with electrical properties of polycrystalline silicon through electron beam-induced current mapping have revealed that electrical inhomogeneities can be attributed to crystallographic dislocations observed in transmission electron micrographs. , This suggests a correlation among defects, impurities, and electrical properties of semiconductor materials. Electron spin resonance experiments have also demonstrated the existence of dangling bonds as electronic defects in polycrystalline silicon films .…”

Section: Introductionmentioning

confidence: 99%

Influence of A-Site Composition on the Nanostructure and Electrical Properties of APbI₃ Perovskite Films: Implications for Solar Cells

Yang,

Zheng,

Wang

et al. 2023

ACS Appl. Nano Mater.

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Solar cells incorporating perovskite films with a blend of A-site cations have gained significant attention due to their enhanced stability and high-power conversion efficiencies. However, the relationship between the microstructure, electrical properties of perovskite films, compositions of A-site cations, and their correlation with the charge carrier dynamics of perovskite solar cells remains unknown. In this study, we investigated the electrical properties of APbI3 perovskite films with varying A-site cations (A = Cs, CsFA, CsFAMA) at the grain boundaries (GBs) and grain interiors (GIs) using advanced probing microscopies. Measurements conducted with voltage-controlled Kelvin probe force microscopy (KPFM) confirmed the presence of ion motion within the perovskite films. By altering the illumination conditions, both KPFM and conductive atomic force microscopy measurements reveal that the hysteresis of CsFA perovskite thin film was significantly greater than that of CsPbI3 and CsFAMA. Moreover, the variation in potential between the three thin films in the GB region and adjacent GI indicates the existence of band bending in the GB region of all three thin films. These findings are crucial for identifying the role of A-site cations in determining the electrical properties of perovskite films in relation to GIs and GBs, thereby facilitating further enhancements in photovoltaic devices through compositional engineering.

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Chlorine passivation of grain boundaries in cadmium telluride solar cells

Cited by 10 publications

References 20 publications

Investigation of Different Configurations in GeSe Solar Cells for Their Performance Improvement

Investigation of Different Configurations in GeSe Solar Cells for Their Performance Improvement

Unravelling the role of triisopropylphosphane telluride in Ag(i) complexes

Influence of A-Site Composition on the Nanostructure and Electrical Properties of APbI₃ Perovskite Films: Implications for Solar Cells

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Chlorine passivation of grain boundaries in cadmium telluride solar cells

Cited by 10 publications

References 20 publications

Investigation of Different Configurations in GeSe Solar Cells for Their Performance Improvement

Investigation of Different Configurations in GeSe Solar Cells for Their Performance Improvement

Unravelling the role of triisopropylphosphane telluride in Ag(i) complexes

Influence of A-Site Composition on the Nanostructure and Electrical Properties of APbI3 Perovskite Films: Implications for Solar Cells

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Product

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Influence of A-Site Composition on the Nanostructure and Electrical Properties of APbI₃ Perovskite Films: Implications for Solar Cells