2020
DOI: 10.1016/j.xcrp.2020.100273
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Chlorine Incorporation in Perovskite Solar Cells for Indoor Light Applications

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Cited by 27 publications
(17 citation statements)
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“…[ 1 ] The role of PV devices is to produce energy and deliver to the Internet of Things devices as per requirement. [ 2–4 ] Recently, Cu 2 ZnSn(S x Se 1– x ) 4 (CZTSSe) and associated compounds which are also known as kesterites receiving growing attention in thin‐film PV sector. [ 5 ] They exhibit favorable optoelectronic properties in addition to containing nontoxic, earth‐abundant, and cheaper elements, which can be used for the development of sustainable PV technologies.…”
Section: Introductionmentioning
confidence: 99%
“…[ 1 ] The role of PV devices is to produce energy and deliver to the Internet of Things devices as per requirement. [ 2–4 ] Recently, Cu 2 ZnSn(S x Se 1– x ) 4 (CZTSSe) and associated compounds which are also known as kesterites receiving growing attention in thin‐film PV sector. [ 5 ] They exhibit favorable optoelectronic properties in addition to containing nontoxic, earth‐abundant, and cheaper elements, which can be used for the development of sustainable PV technologies.…”
Section: Introductionmentioning
confidence: 99%
“…Hence, in the present study, an attempt has been made to improve the photogenerated charge carriers by reducing the trap sites or density of defects, which is the major hindrance under diffuse low-light condition, by the introduction of naturally extracted graphitic carbon-encapsulated perovskite interface layer. However, this layer not only acts as a HTM but also tends to passivate the active absorber layer to combat the density trap site defects, which will help to achieve higher PCE under low-light diffuse conditions. , Figure a describes the J – V characteristic performances of the fabricated STD, IND, and BLD devices, measured under indoor low-light conditions when simulated using room light LED with the power intensity of ∼200 to 250 lux (0.1 SUN about ∼120 μW/cm 2 ). From the summarized J – V parameters given in Table S3, it is clear that the performance of the interface-modified devices (IND and BLD) is good, holding 20.90 and 13.81%, respectively, when compared to that of the standard device having no interface layers (7.26%).…”
Section: Resultsmentioning
confidence: 99%
“…These suggest that excellent PV properties based on device architecture optimized under 1SUN conditions cannot guarantee their excellence under low-intensity light illumination because of reduced photo-generated carriers. 18 Based on these previous studies, PVSCs comprising a planar metal oxide ETL exhibit high power density and iPCE of 121.07 μW/cm 2 and 40.1%, respectively, under a light-emitting diode (LED) lamp with 824.5 Lux. 23 Similar to metal oxide ETLs, interface trap states in organic ETLs should also have a critical effect on the power drop of PVSCs under low-intensity light illumination.…”
Section: ■ Introductionmentioning
confidence: 95%