Two examples of a rare class of di-radical azo-anion complexes of 2-(arylazo) pyridine with Ir(III) carrier are introduced. Their electronic structures have been elucidated using a host of physical methods that include X-ray crystallography, cyclic voltammetry, electron paramagnetic resonance spectroscopy, and density functional theory. Room temperature magnetic moments of these are consistent with two nearly non-interacting azo-anion radicals. These displayed rich electrochemical properties consisting of six numbers of reversible and successive one electron CV-waves. Redox processes occur entirely at the coordinated ligands without affecting metal redox state. Apart from reporting their chemical characterization, I-V characteristics of these complexes in film state are investigated using sandwich-type devices comprising of a thin film of 100-125 nm thickness placed between two gold-plated ITO electrodes. These showed memory switching properties covering a useful voltage range with a reasonable ON/OFF ratio and also are suitable for RAM/ROM applications. I-V characteristics of two similar complexes of Rh and Cr with identical ligand environment and electronic structure are also referred for developing an insight into the memory switching ability of Ir- and Rh- complexes on the basis of comparative analysis of responses of the respective systems. In a nutshell, thorough analysis of voltage driven redox dynamics and corresponding solid and solution state current responses of all the systems are attempted and there from an unexplored class of switching devices are systematically introduced.