Chip Size Minimization for Wide and Ultrawide Bandgap Power Devices

Wang, Boyan; Xiao, Ming; Zhang, Zichen; Xiao, Ming; Qin, Yuan; Song, Qihao; Lu, Guo-Quan; Ngo, Khai D. T.; Zhang, Yuhao

doi:10.1109/ted.2022.3232309

Cited by 10 publications

(5 citation statements)

References 41 publications

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“…Among the UWBG semiconductors, diamond and AlN have the theoretical best-in-class power material figure-of-merit [142,143]. Due to the relative immaturity of material synthesis and processing technologies, their device development is still at an early stage, although packaged diamond power devices have been recently demonstrated with bottom-side packages (figures 11(a) and (b)) [10].…”

Section: Diamond and Aln Devicesmentioning

confidence: 99%

Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective

Qin

Albano

Spencer

et al. 2023

J. Phys. D: Appl. Phys.

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Power semiconductor device is a fundamental driver for advancement in power electronics, the technology for electric energy conversion. Power devices based on wide-bandgap (WBG) and ultra-wide bandgap (UWBG) semiconductors allow for smaller chip size, lower loss and higher frequency as compared to the silicon (Si) counterpart, thus enabling a higher system efficiency and smaller form factor. Amongst the challenges for the development and deployment of WBG and UWBG devices is the efficient dissipation of heat, an unavoidable by-product of the higher power density. To mitigate the performance limitations and reliability issues caused by self-heating, thermal management is required at both device and package levels. Particularly, packaging is a crucial milestone for the development of any power device technology; WBG and UWBG devices have both reached this milestone recently. This paper provides a timely review on the thermal management of WBG and UWBG power devices with an emphasis on the packaged devices. Additionally, emerging UWBG devices hold good promise for high-temperature applications due to the low intrinsic carrier density and the increased dopant ionization at elevated temperatures. The fulfillment of this promise in system applications, in conjunction with overcoming the thermal limitations of some UWBG materials, require new thermal management and packaging technologies. To this end, we provide perspectives on the relevant challenges, potential solutions and research opportunities, highlighting the pressing needs for the device-package, electro-thermal co-design and the high-temperature packages that can withstand the high electric field expected in UWBG devices.

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Section: Diamond and Aln Devicesmentioning

confidence: 99%

Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective

Qin

Albano

Spencer

et al. 2023

J. Phys. D: Appl. Phys.

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“…6 The band gaps of AlN and diamond are 6.2 and 5.5 eV, respectively, and their ultrawide band gaps and large breakdown electric field can further improve the efficiency and power density of the highpower and high-frequency electronic devices. 7 AlN has a theoretical thermal conductivity of 319 W•m −1 •K −1 , surpassing that of most semiconductor materials such as Si, GaN, and Ga 2 O 3 . Diamond is considered the ultimate semiconductor material with a thermal conductivity as high as 2000 W•m −1 • K −1 .…”

Section: Introductionmentioning

confidence: 96%

“…Emerging ultrawide band gap (UWBG) semiconductor materials, represented by aluminum nitride (AlN), diamond and gallium oxide (Ga 2 O 3 ), exhibit excellent properties and have attracted significant interest for their exceptional characteristics and the potential applications in electronics, , optoelectronics, thermal management, , and surface acoustic wave devices . The band gaps of AlN and diamond are 6.2 and 5.5 eV, respectively, and their ultrawide band gaps and large breakdown electric field can further improve the efficiency and power density of the high-power and high-frequency electronic devices . AlN has a theoretical thermal conductivity of 319 W·m –1 ·K –1 , surpassing that of most semiconductor materials such as Si, GaN, and Ga 2 O 3 .…”

Section: Introductionmentioning

confidence: 99%

Interfacial Optimization for AlN/Diamond Heterostructures via Machine Learning Potential Molecular Dynamics Investigation of the Mechanical Properties

Qi,

Sun,

Sun

et al. 2024

ACS Appl. Mater. Interfaces

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AlN/diamond heterostructures hold tremendous promise for the development of next-generation high-power electronic devices due to their ultrawide band gaps and other exceptional properties. However, the poor adhesion at the AlN/ diamond interface is a significant challenge that will lead to film delamination and device performance degradation. In this study, the uniaxial tensile failure of the AlN/diamond heterogeneous interfaces was investigated by molecular dynamics simulations based on a neuroevolutionary machine learning potential (NEP) model. The interatomic interactions can be successfully described by trained NEP, the reliability of which has been demonstrated by the prediction of the cleavage planes of AlN and diamond. It can be revealed that the annealing treatment can reduce the total potential energy by enhancing the binding of the C and N atoms at interfaces. The strain engineering of AlN also has an important impact on the mechanical properties of the interface. Furthermore, the influence of the surface roughness and interfacial nanostructures on the AlN/diamond heterostructures has been considered. It can be indicated that the combination of surface roughness reduction, AlN strain engineering, and annealing treatment can effectively result in superior and more stable interfacial mechanical properties, which can provide a promising solution to the optimization of mechanical properties, of ultrawide band gap semiconductor heterostructures.

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“…Due to the wide bandgap (~4.8 eV) [1], high Baliga's figure-of-merit (BFOM) [2], and outstanding breakdown strength (~8 MV/cm) [3], gallium oxide (Ga 2 O 3 ) has shown great potential in power devices including metal-oxide-semiconductor field effect transistors (MOSFETs) and Schottky barrier diodes (SBDs) [4][5][6]. For high-power devices, thermal cooling efficiency is vital for operation robustness and lifetime, which requires dedicated thermal management [7][8][9]. A major disadvantage of gallium oxide is its low thermal conductivity [10], which, if not well considered, will reduce the performance of Ga 2 O 3 -based devices.…”

Section: Introductionmentioning

confidence: 99%

Breakdown Characteristics of Ga2O3-on-SiC Metal-Oxide-Semiconductor Field-Effect Transistors

et al. 2023

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Ultra-wide bandgap semiconductor gallium oxide (Ga2O3) features a breakdown strength of 8 MV/cm and bulk mobility of up to 300 cm2V−1s−1, which is considered a promising candidate for next-generation power devices. However, its low thermal conductivity is reckoned to be a severe issue in the thermal management of high-power devices. The epitaxial integration of gallium oxide thin films on silicon carbide (SiC) substrates is a possible solution for tackling the cooling problems, yet premature breakdown at the Ga2O3/SiC interface would be introduced due to the relatively low breakdown strength of SiC (3.2 MV/cm). In this paper, the on-state properties as well as the breakdown characteristics of the Ga2O3-on-SiC metal-oxide-semiconductor field-effect transistor (MOSFET) were investigated by using the technology computer-aided design (TCAD) approach. Compared with the full-Ga2O3 MOSFET, the lattice temperature of the Ga2O3-on-SiC MOSFET was decreased by nearly 100 °C thanks to the high thermal conductivity of SiC. However, a breakdown voltage degradation of >40% was found in an unoptimized Ga2O3-on-SiC MOSFET. Furthermore, by optimizing the device structure, the breakdown voltage degradation of the Ga2O3-on-SiC MOSFET is significantly relieved. As a result, this work demonstrates the existence of premature breakdown in the Ga2O3-on-SiC MOSFET and provides feasible approaches to further enhance the performance of hetero-integrated Ga2O3 power devices.

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Chip Size Minimization for Wide and Ultrawide Bandgap Power Devices

Cited by 10 publications

References 41 publications

Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective

Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective

Interfacial Optimization for AlN/Diamond Heterostructures via Machine Learning Potential Molecular Dynamics Investigation of the Mechanical Properties

Breakdown Characteristics of Ga2O3-on-SiC Metal-Oxide-Semiconductor Field-Effect Transistors

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