Chip-scale sonic communication using AlN transducers

Hoople, Jason; Kuo, Justin; Ardanuç, Serhan; Lal, Amit

doi:10.1109/ultsym.2013.0493

Cited by 10 publications

(5 citation statements)

References 7 publications

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“…Then with the understanding gained the whole stack will be designed and simulated. The objective is to maximize the signal level and bandwidth, while reducing the resonance peak from 2.7 GHz [1][2][3] to as close to 1 GHz as possible.…”

Section: Simulation Resultsmentioning

confidence: 99%

“…Previously we reported on a new methodology utilizing ultrasonic waves in silicon as a reconfigurable low power communication channel [1][2][3]. Our vision is a completely integrated system where piezoelectric transducers (such as aluminum nitride [AlN]) are integrated on the top of a CMOS stack.…”

Section: Introductionmentioning

confidence: 99%

“…Our vision is a completely integrated system where piezoelectric transducers (such as aluminum nitride [AlN]) are integrated on the top of a CMOS stack. With the initial successes [1][2][3] it became necessary to optimize the efficiency of the transducers.…”

Section: Introductionmentioning

confidence: 99%

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Optimized response of AlN stack for chipscale GHz ultrasonics

Hoople¹,

Kuo²,

Woon

et al. 2015

2015 IEEE International Ultrasonics Symposium (IUS)

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In this paper we present designs of an aluminum nitride (AlN) based transducer stack for ultrasonic transmit/receive applications integrated in silicon. By optimal design of the mechanical layer thickness and material properties, channel gain, center frequency and bandwidth can be controlled to allow for the use of lower gain and on-chip power electronics for integrated ultrasonic information processing. Certain materials in the stack were fixed due to the fabrication processing capability, however some of the passive layers, and the thicknesses of the layers could be controlled. Simulations were done to select the desired thicknesses of each layer and the resulting chip was fabricated and verified. Previous tape-outs from the fab had resulted in receive signal levels of 200 µV at 1.3 GHz, whereas the current stack had signal levels of 18 mV at 1.3 GHz.

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Section: Simulation Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Optimized response of AlN stack for chipscale GHz ultrasonics

Hoople¹,

Kuo²,

Woon

et al. 2015

2015 IEEE International Ultrasonics Symposium (IUS)

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“…2 and as discussed previously in [3]. The aluminum nitride thickness is 1.5 μm, with a 3.5 μm thick layer of oxide between the transducer and the silicon, as shown in Fig.…”

Section: Methodsmentioning

confidence: 95%

“…While other materials such as PZT have higher electrical to acoustic conversion efficiencies, aluminum nitride has the advantage of being CMOS compatible. In previous work from our group [3], we have demonstrated the use of aluminum nitride transducers for on chip communication by sending an acoustic pulse from one transducer in an array, reflecting the pulse off the bottom surface of the silicon substrate, and receiving the pulse from a neighboring transducer in the array. Here, we take the concept one step further and demonstrate the use of aluminum nitride transducers in a TSV-like communication link.…”

Section: Introductionmentioning

confidence: 99%

Towards ultrasonic through-silicon vias (UTSV)

Kuo

Hoople

Ardanuç

et al. 2014

2014 IEEE International Ultrasonics Symposium

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3D interconnects between stacked silicon chips in 3D integrated circuits (3DICs) have been realized with throughsilicon vias (TSVs). These call for special processing microfabriation techniques requiring through wafer etching and metal filling, which add to the cost and can lead to lower chip reliability due to thermal expansion mismatch related strain fields. In this paper, we present a novel interconnect for 3DICs -an ultrasonic TSV implemented with piezoelectric aluminum nitride (AlN) thin film transducers on silicon. Whereas TSVs require a physical via through the entire thickness of a wafer, the ultrasonic TSV works by propagating signals from one aluminum nitride (AlN) transducer to another with bulk acoustic waves through the silicon wafer. This technology has the potential to simplify processing in 3DIC manufacturing and integration and increase TSV density.

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