Chip-Level Optical Interconnects Using Polymer Waveguide Integrated With Laser/PD on Silicon

Shen, Po-Kuan; Chen, Chin-Ta; Chen, Ruei-Hung; Lin, Sheng-Fu; Chang, Chi-Lung; Hsiao, Hsu-Liang; Lan, Hsiao-Chin; Lee, Yun-Chih; Lin, Yo-Shen; Wu, Mount-Learn

doi:10.1109/lpt.2015.2413362

Cited by 13 publications

(5 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Several research groups have investigated the low-power-dissipation operations of vertical-cavity surfaceemitting lasers (VCSELs), [10][11][12] microdisk lasers, 13,14) and photonic crystal lasers (PC-LDs). [15][16][17] Although VCSELs have been introduced into short-reach board-to-board optical communication at datacenters and supercomputers owing to their potential for high-speed direct modulation with low energy consumption, 18) 45°total-reflection mirrors are required to establish in-plane integrated circuits with VCSELs. 19) Microdisk lasers and PC-LDs have demonstrated low-energy-cost data transmission in in-plane optical links.…”

mentioning

confidence: 99%

20-Gbit/s direct modulation of GaInAsP/InP membrane distributed-reflector laser with energy cost of less than 100 fJ/bit

Tomiyasu

Inoue

Hiratani

et al. 2017

Appl. Phys. Express

View full text Add to dashboard Cite

We demonstrated 20-Gbit/s direct modulation with a low energy cost of the membrane distributed-reflector (DR) laser whose static lasing characteristics were previously reported by Tomiyasu et al. in Appl. Phy. Express 10, 062702 (2017). As a small-signal modulation characteristic, a modulation current efficiency of 12 GHz/mA1/2 was obtained. In 20-Gbit/s direct modulation using a non-return-to-zero 211 − 1 word-length pseudorandom bit sequence signal, a clear eye opening with a bit-error rate of 6.4 × 10−10 was obtained with a bias current of 1.06 mA and a bias voltage of 1.76 V, which resulted in a record low energy cost of 93 fJ/bit among membrane distributed-feedback (DFB) and DR lasers ever reported.

show abstract

mentioning

confidence: 99%

20-Gbit/s direct modulation of GaInAsP/InP membrane distributed-reflector laser with energy cost of less than 100 fJ/bit

Tomiyasu

Inoue

Hiratani

et al. 2017

Appl. Phys. Express

View full text Add to dashboard Cite

show abstract

“…1,2) For intra-chip optical interconnections, the required bandwidth density is estimated to be 10 Pbps cm −2 , which is three orders of magnitude higher than the bandwidth density required for inter-chip optical interconnections. 3) Traditional III-V lasers such as distributed feedback laser, [4][5][6][7] distributed Bragg reflector laser, 8) and vertical cavity surface emitting lasers [9][10][11][12] are difficult to meet this demand due to their structure limitations. Photonic crystal (PhC) lasers using a defect cavity are a promising solution due to their small size, 13,14) high quality(Q)-factor, [15][16][17] low power consumption, [18][19][20][21][22] and high modulation speed.…”

Section: Introductionmentioning

confidence: 99%

Selective dry etching of GaAs/AlO_x for realizing electrical isolation on monolithic integrated photonic crystal laser array

Xiong

Tani

Cong

et al. 2020

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

Extremely high etch selectivity of GaAs over AlOx is mandatory to fabricate a current blocking trench (CBT) between adjacent lasers in a photonic crystal (PhC) laser array for intra-chip optical interconnections. In this paper, selective etching of GaAs on AlOx with PhC structure is reported for the first time by using inductively coupled plasma etching with Cl2/BCl3-containing gas mixture. The etched profile of the CBT on GaAs/AlOx heterostructure with PhC structure was significantly different from that without PhC structure. By optimizing the etching conditions, the etching of the CBT was stopped at AlOx, and extremely high etch selectivity of GaAs over AlOx was achieved. Thus, we successfully fabricated the CBT in the PhC laser array. The horizontal electrical resistance between adjacent laser cavities with a 0.4 μm or wider CBT reached the instrumentation-limit of 100 MΩ, confirming the electrical isolation effect of the CBT.

show abstract

“…Though GaAs-and InP-based PICs at the near-infrared wavelength have been studied [10], such photonic integration at the visible wavelength is still not available in III-nitride material systems. Towards such integration, GaN-based core-shell nanowire LEDs and PDs were placed and patterned to demonstrate optical coupling with SiN waveguides [11]. Besides, researchers fabricated the LED, PD and the suspended waveguide on the same GaN-onsilicon substrate [12] and such scheme enabled 30Mbps in-plane data communication link [13].…”

Section: Introductionmentioning

confidence: 99%

Semipolar InGaN quantum-well laser diode with integrated amplifier for visible light communications

Shen

Lee

et al. 2018

Opt. Express

View full text Add to dashboard Cite

GaN-based semiconductor optical amplifier (SOA) and its integration with laser diode (LD) is an essential building block yet to be demonstrated for III-nitride photonic integrated circuits (PICs) at visible wavelength. This paper presents the InGaN/GaN quantum well (QW) based dual-section LD consisting of integrated amplifier and laser gain regions fabricated on a semipolar GaN substrate. The threshold current in the laser gain region was favorably reduced from 229mA to 135mA at SOA driving voltages, V, of 0V and 6.25V, respectively. The amplification effect was measured based on a large gain of 5.7 dB at V = 6.25V from the increased optical output power of 8.2 mW to 30.5 mW. Such integrated amplifier can be modulated to achieve Gbps data communication using on-off keying technique. The monolithically integrated amplifier-LD paves the way towards the III-nitride on-chip photonic system, providing a compact, low-cost, and multi-functional solution for applications such as smart lighting and visible light communications.

show abstract

Chip-Level Optical Interconnects Using Polymer Waveguide Integrated With Laser/PD on Silicon

Cited by 13 publications

References 12 publications

20-Gbit/s direct modulation of GaInAsP/InP membrane distributed-reflector laser with energy cost of less than 100 fJ/bit

20-Gbit/s direct modulation of GaInAsP/InP membrane distributed-reflector laser with energy cost of less than 100 fJ/bit

Selective dry etching of GaAs/AlO_x for realizing electrical isolation on monolithic integrated photonic crystal laser array

Semipolar InGaN quantum-well laser diode with integrated amplifier for visible light communications

Contact Info

Product

Resources

About

Chip-Level Optical Interconnects Using Polymer Waveguide Integrated With Laser/PD on Silicon

Cited by 13 publications

References 12 publications

20-Gbit/s direct modulation of GaInAsP/InP membrane distributed-reflector laser with energy cost of less than 100 fJ/bit

20-Gbit/s direct modulation of GaInAsP/InP membrane distributed-reflector laser with energy cost of less than 100 fJ/bit

Selective dry etching of GaAs/AlO x for realizing electrical isolation on monolithic integrated photonic crystal laser array

Semipolar InGaN quantum-well laser diode with integrated amplifier for visible light communications

Contact Info

Product

Resources

About

Selective dry etching of GaAs/AlO_x for realizing electrical isolation on monolithic integrated photonic crystal laser array