Chemomechanical polishing of gallium arsenide and cadmium telluride to subnanometre surface finish. Evaluation of the action and effectiveness of hydrogen peroxide, sodium hypochlorite and dibromine as reagents

McGhee, Laurence; McMeekin, Scott G.; Nicol, Irene; Robertson, Max; Winfield, John M.

doi:10.1039/jm9940400029

Cited by 7 publications

(11 citation statements)

References 14 publications

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“…[6][7][8][9] McGhee et al 6 proposed a three step mechanism for GaAs removal in an aqueous solution containing H 2 O 2 and ammonia. An oxohydroxyl layer, consisting of sparingly soluble oxohydroxides of Ga and As, was first formed on the surface.…”

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confidence: 99%

Fundamental Investigation of Chemical Mechanical Polishing of GaAs in Silica Dispersions: Material Removal and Arsenic Trihydride Formation Pathways

Matovu

Ong

Leunissen

et al. 2013

ECS J. Solid State Sci. Technol.

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The fabrication of InGaAs n-channels in CMOS devices requires an intervening buffer layer of GaAs or InP between a Si substrate and the InGaAs channel layer, which has to be planarized to enable the growth of a channel that is free of defects due to uneven surface topography. This report discusses the material removal rates (RRs) and AsH 3 evolution observed during chemical mechanical polishing (CMP) of GaAs using aq. solutions of hydrogen peroxide (H 2 O 2 ) and silica slurries containing H 2 O 2 . GaAs RRs were negligible with deionized water or with silica slurries alone. They were relatively high in aq. solutions of H 2 O 2 alone and showed a strong pH-dependence, with significantly higher RRs in the alkaline region. The addition of silica particles to aq. H 2 O 2 did not increase the GaAs RRs significantly. The evolution of arsenic trihydride (AsH 3 ) during the dissolution of GaAs in aq. H 2 O 2 solution was similarly higher in the basic pH range than in neutral pH or in the acidic pH range. However, no AsH 3 was measured during polishing, evidently because of the relatively high water solubility of AsH 3 . In this report, GaAs removal rates and AsH 3 formation are analyzed using data from contact angle measurements, X-Ray photoelectron spectroscopy (XPS), and X-Ray fluorescence (XRF) spectroscopy. Reaction pathways leading to material removal are proposed.The quest for faster devices in the microelectronic industry has renewed interest in III-V materials such as InP, GaAs, and InGaAs as n-channel candidates because of their high electron mobility. 1,2 During the fabrication of n-channels in CMOS devices, chemical mechanical polishing (CMP) of these materials is required to achieve a smooth and planar surface to enable further processing. There are several environmental health and safety (EHS) issues associated with polishing and wet processing of these III-V materials. 2-5 The EHS concerns for As containing materials include the evolution of toxic arsenic trihydride (AsH 3 ) gas, and the handling of arsenic contaminated slurry waste and used consumables (e.g., polishing pads). For InP, the major concern has been the generation of toxic phosphine gas during polishing. 3,4 In this work, the focus is on the chemical mechanical polishing of GaAs and evolution of AsH 3 .There are several reports on the CMP of GaAs using slurries that contain oxidizers such as hydrogen peroxide (H 2 O 2 ), sodium hypochlorite (NaOCl), and dibromine (Br 2 ). 6-9 McGhee et al. 6 proposed a three step mechanism for GaAs removal in an aqueous solution containing H 2 O 2 and ammonia. An oxohydroxyl layer, consisting of sparingly soluble oxohydroxides of Ga and As, was first formed on the surface. These oxohydroxides were converted to soluble species upon complexation with aq. NH 3 . The soluble species were then removed from the surface by mechanical wiping. In Br 2 -MeOH solutions, they proposed that an adsorbed Br layer was formed on the GaAs surface. The adsorption of bromine was followed by a redox reaction, which continued as lo...

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mentioning

confidence: 99%

Fundamental Investigation of Chemical Mechanical Polishing of GaAs in Silica Dispersions: Material Removal and Arsenic Trihydride Formation Pathways

Matovu

Ong

Leunissen

et al. 2013

ECS J. Solid State Sci. Technol.

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“…The different deformation behaviors of GaAs with various crystal orientations were due to the differences in the atomic structure of GaAs. The friction coefficient (scratching resistance) of GaAs(001) [100] combination was the biggest, while the friction coefficient of GaAs(111) [1][2][3][4][5][6][7][8][9][10] combination was the smallest; the friction coefficient of GaAs(110) [001] combination was in between the two.…”

Section: Discussionmentioning

confidence: 99%

“…For GaAs(110) surface, x was along [001], y along [110] and z along [110]. For GaAs(111) surface, x was along [1][2][3][4][5][6][7][8][9][10], y along and z along [111]. The scratching direction was along the negative x direction.…”

Section: The Anisotropic Effectsmentioning

confidence: 99%

“…For the GaAs(001) [100] combination, the friction coefficients were the biggest, while both the atomic planar density and interplanar spacing were the smallest. Moreover, the friction coefficients of GaAs(111) [1][2][3][4][5][6][7][8][9][10] combination were the smallest and both the atomic planar density and interplanar spacing of compound GaAs(111) were the biggest; the friction coefficients of GaAs(110) [001] combination were in between the two, as were the atomic planar density and interplanar spacing of GaAs(110). Figure 11 shows the average friction force, normal force, and friction coefficient for different crystallographic orientations during the scratching process.…”

Section: The Anisotropic Effectsmentioning

confidence: 99%

“…Many researchers have investigated the CMP process of GaAs. For instance, subnanometer surface finish was achieved in CMP of GaAs [3]. Matovu et al studied the material removal in the CMP process of GaAs with SiO 2 particles [4].…”

Section: Introductionmentioning

confidence: 99%

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Study of Nanoscratching Process of GaAs Using Molecular Dynamics

Zhu

2018

Crystals

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In this paper, molecular dynamics method was employed to investigate the nanoscratching process of gallium arsenide (GaAs) in order to gain insights into the material deformation and removal mechanisms in chemical mechanical polishing of GaAs. By analyzing the distribution of hydrostatic pressure and coordination number of GaAs atoms, it was found that phase transformation and amorphization were the dominant deformation mechanisms of GaAs in the scratching process. Furthermore, anisotropic effect in nanoscratching of GaAs was observed. The diverse deformation behaviors of GaAs with different crystal orientations were due to differences in the atomic structure of GaAs. The scratching resistance of GaAs(001) surface was the biggest, while the friction coefficient of GaAs(111) surface was the smallest. These findings shed light on the mechanical wear mechanism in chemical mechanical polishing of GaAs.

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Effect of SiO2 Powder on Mirror Polishing of InP Wafers

Morisawa

Kikuma

Takayama³

et al. 1997

Journal of Elec Materi

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This paper describes a mechanical-chemical polishing technique of InP wafers using NaOC1, citric acid, and SiO 2 powder solutions. The polishing rate rapidly increases by adding SiO 2 powder to NaOC1 and citric acid solutions. We study the dependence of the polishing rate on SiO 2 powder and discuss the mechanicalchemical effect of the mirror polishing of InP wafers with NaOC1, citric acid, and SiO 2 powder solutions. We observe an increase in the polishing rate of InP wafers from 0.2 to 0.9 gm/min when SiO 2 powder is added to NaOC1 and citric acid solutions.

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Chemomechanical polishing of gallium arsenide and cadmium telluride to subnanometre surface finish. Evaluation of the action and effectiveness of hydrogen peroxide, sodium hypochlorite and dibromine as reagents

Cited by 7 publications

References 14 publications

Fundamental Investigation of Chemical Mechanical Polishing of GaAs in Silica Dispersions: Material Removal and Arsenic Trihydride Formation Pathways

Fundamental Investigation of Chemical Mechanical Polishing of GaAs in Silica Dispersions: Material Removal and Arsenic Trihydride Formation Pathways

Study of Nanoscratching Process of GaAs Using Molecular Dynamics

Effect of SiO2 Powder on Mirror Polishing of InP Wafers

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