2005
DOI: 10.1021/ar040242u
|View full text |Cite
|
Sign up to set email alerts
|

Chemomechanical Functionalization and Patterning of Silicon

Abstract: The chemomechanical method has emerged as a straightforward and convenient tool for simultaneously functionalizing and patterning silicon. This technique simply consists of wetting (or exposing) a silicon surface to a reactive chemical and then scribing. Scribing activates the surface and leads to monolayer formation. The properties of the monolayers are dependent on the reactive chemicals used, and mixed monolayers and funtionalized monolayers are easily produced with mixed chemicals or alpha,omega-bifunction… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1

Citation Types

1
53
0

Year Published

2008
2008
2016
2016

Publication Types

Select...
4
4

Relationship

0
8

Authors

Journals

citations
Cited by 62 publications
(54 citation statements)
references
References 65 publications
(219 reference statements)
1
53
0
Order By: Relevance
“…Those are: (a) the expanding literature on porous silicon chemistry and porous silicon biosensing applications; [54][55][56][57][58][59][60][61][62] (b) metal-insulator-semiconductor (MIS) studies on organic modified silicon surfaces; 39,43,48,[63][64][65][66][67] (c) chemomechanical functionalisation approaches (i.e. 'wetting and scribe' methods); 68,69 and (d) ultra-high vacuum reactions (UHV, 10 À10 mbar or lower) of unsaturated molecules on reconstructed semiconductor surfaces. 42,70,71 2.…”
Section: Jason B Harpermentioning
confidence: 99%
“…Those are: (a) the expanding literature on porous silicon chemistry and porous silicon biosensing applications; [54][55][56][57][58][59][60][61][62] (b) metal-insulator-semiconductor (MIS) studies on organic modified silicon surfaces; 39,43,48,[63][64][65][66][67] (c) chemomechanical functionalisation approaches (i.e. 'wetting and scribe' methods); 68,69 and (d) ultra-high vacuum reactions (UHV, 10 À10 mbar or lower) of unsaturated molecules on reconstructed semiconductor surfaces. 42,70,71 2.…”
Section: Jason B Harpermentioning
confidence: 99%
“…One of the most frequently used techniques for modification of solid surfaces is that of self-assembled monolayer (SAM) formation, which is a useful method for construction of interfacial self-assembled structures on solid surfaces [882,[883][884][885][886][887][888]. As illustrated in figure 104, three main types of method for covalent bonding have been proposed.…”
Section: Self-assembled Monolayersmentioning
confidence: 99%
“…As illustrated in figure 104, three main types of method for covalent bonding have been proposed. Science and technology based on surface coating has been widely developed using the SAM method [882,[883][884][885][886][887][888].…”
Section: Self-assembled Monolayersmentioning
confidence: 99%
“…[4] Several approaches have been proposed and demonstrated so far: from electrochemical control of biomolecular self-assembly, [5] gold-thiol interactions, [2] to local top-down lithography and silanization, [6] photothermal nanopatterning [7] and chemomechanical functionalization. [8] Recently we proposed an alternative functionalization method [9] that shares with the chemomechanical patterning described in ref. [8] the concept of mechanical modification inside a reactive medium but is intrinsically self-aligned with pre-nanofabricated structures.…”
mentioning
confidence: 99%
“…[8] Recently we proposed an alternative functionalization method [9] that shares with the chemomechanical patterning described in ref. [8] the concept of mechanical modification inside a reactive medium but is intrinsically self-aligned with pre-nanofabricated structures. We used silicon sacrificial structures, fabricated for this purpose, that we cleaved inside a reactive medium, exploiting the reactivity of the freshly cleaved surface, thus generating a chemically functionalized structure at a predefined location of a device with arbitrary shape and size, with the only constraint being the fundamental limits imposed by the lithographic techniques.…”
mentioning
confidence: 99%