Chemistry of SiNx thin film deposited by plasma-enhanced atomic layer deposition using di-isopropylaminosilane (DIPAS) and N2 plasma

High-quality SiNx thin-film growth at 300 °C using atomic layer deposition with hollow-cathode plasma

“…This suggests that the N concentration is higher for the films grown using HCP compared with ICP, and the NH 3 plasma results in a higher N concentration in the film compared with the N 2 plasma. 47,48 This is confirmed by the N 1s core level spectra in Fig. 2b, which show that HCP and NH 3 plasma are more effective for incorporation of N into the films compared with ICP and N 2 plasma.…”

“…2b, which show that HCP and NH 3 plasma are more effective for incorporation of N into the films compared with ICP and N 2 plasma. 47 Fig. 2c presents the N/Si ratio of the various SiN x films estimated based on the area of the deconvoluted peaks in the Si 2p and N 1s core level spectra.…”

“…Meanwhile, SiN x films grown using N 2 HCP and PECVD exhibited steady and excellent etch resistance, whereas the SiN x film grown using N 2 ICP shows a higher etch rate, especially at the beginning of etching (within 1 min of the start); this is because surface oxides easily form via air exposure. 47 The thickness change in the SiN x films with the exposure time to the atmosphere is depicted in Fig. 3b.…”

A Monoclinic V1-x-yTixRuyO2 Thin Film with Enhanced Thermal-Sensitive Performance

“…Denser passivation layer results in better protection effect. Generally, high preparation temperature contributes to denser passivation layer [5,6], thus better protection effect for VO x thin films. However, VO x thermal-sensitive thin films, which are generally prepared at relatively low temperature (lower than 300°C), are amorphous [3,7,8].…”

Surface reactions of aminosilane precursors during N2 plasma‐assisted atomic layer deposition of SiNx

“…While Cl‐containing Si precursors have been widely used in the ALD of SiN x films, these precursors form corrosive byproducts that can damage the underlying films and the reactor walls. Therefore, aminosilane precursors have recently received attention as potential alternatives to chlorosilane precursors . Previous work on plasma‐assisted SiN x ALD has shown that the choice of the Si precursor constrains the choice of the N‐containing plasma: SiN x growth with chlorosilane precursors requires an NH 3 or N 2 /H 2 plasma, and SiN x growth with aminosilane precursors requires an N 2 plasma .…”