Chemistry of Semiconductor Impurity Processing

Abstract

This chapter is devoted to the study of the various defect engineering processes to which a silicon sample is subjected during the fabrication of a microelectronic device. The first case discussed is that of thermal annealing processes, adopted to recover the mechanical stress generated in the material during the device fabrication process, or the irradiation damage of ion-implanted layers for surface doping. The further, and more important, case considered is that of impurity deactivation by hydrogenation or by phosphorus and aluminium gettering.