Chemistry of InP Nanocrystal Syntheses

Tamang, Sudarsan; Lincheneau, Christophe; Hermans, Yannick; Jeong, Sohee; Reiß, Peter

doi:10.1021/acs.chemmater.5b05044

Cited by 328 publications

(396 citation statements)

References 132 publications

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“…[63][64][65][66] Although there have been several reports on InP QLEDs, a gap remains in terms of the performance of InP QLEDs and that of Cd-chalcogenide QLEDs, 67,68 which can be attributed to the lack of fundamental understanding of the EL process of InP QDs. Recent progress on QLEDs based on green InP core-shell QDs is encouraging (Fig.…”

Section: Materials Design For Efficient Qledsmentioning

confidence: 99%

Flexible quantum dot light-emitting diodes for next-generation displays

et al. 2018

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In the future electronics, all device components will be connected wirelessly to displays that serve as information input and/or output ports. There is a growing demand of flexible and wearable displays, therefore, for information input/output of the nextgeneration consumer electronics. Among many kinds of light-emitting devices for these next-generation displays, quantum dot light-emitting diodes (QLEDs) exhibit unique advantages, such as wide color gamut, high color purity, high brightness with low turn-on voltage, and ultrathin form factor. Here, we review the recent progress on flexible QLEDs for the next-generation displays. First, the recent technological advances in device structure engineering, quantum-dot synthesis, and high-resolution full-color patterning are summarized. Then, the various device applications based on cutting-edge quantum dot technologies are described, including flexible white QLEDs, wearable QLEDs, and flexible transparent QLEDs. Finally, we showcase the integration of flexible QLEDs with wearable sensors, micro-controllers, and wireless communication units for the next-generation wearable electronics.

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Section: Materials Design For Efficient Qledsmentioning

confidence: 99%

Flexible quantum dot light-emitting diodes for next-generation displays

et al. 2018

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“…However, since the luminescence efficiency is lower than that of the II-VI group quantum dots and InP has a relatively wide full width half maximum (FWHM) value, research is needed to overcome these problems. [17] As shown in Figure 6, CdSe and InP quantum dots, especially among various kinds of quantum dots, are suitable quantum dots for display applications because they can control the size to a desired wavelength in the entire visible light.…”

Section: Semiconductor Nanocrystalsmentioning

confidence: 99%

“…However, not only does Cd 2+ and Se 2-contain harmful substances, but it also causes serious problems and may have harmful effects on the human body when applied to the biotechnology field. [17] In order to solve this problem, a large number of III-V binary and I-III-VI ternary compound semiconductor quantum dots, which can replace II-VI series quantum dots, have been studied. Of the III-V group quantum dots, the InP quantum dot are the most extensively studied materials due to their non-toxicity advantages compared with the II-VI compound semiconductors, their luminescent area similar to the CdSe quantum dots, and good luminescence efficiency.…”

Section: Iii-v Group Quantum Dotsmentioning

confidence: 99%

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Large-Scale Synthesis of Highly Luminescent InP@ZnS Quantum Dots Using Elemental Phosphorus Precursor

et al. 2017

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Colloidal quantum dots can control the bandgap by controlling the particle size, and are capable of solution processing, which is cost competitive, and has a narrow half width of the emission wavelength.Using these characteristics, it is possible to utilize various kinds of LED, solar cell, and bio imaging.Among them, indium phosphide (InP) quantum dots have a bandgap capable of emitting light in the near-infrared region from the visible light region, and are less toxic to humans and the environment than cadmium-based quantum dots, and are attracting attention as next generation light emitting materials.However, the limited choice and high cost of P precursors have a negative impact on their practical applicability. In this work, I report the large-scale synthesis of highly luminescent InP@ZnS QDs from an elemental P precursor (P4), which was simply synthesized via the sublimation of red P powder. The size of the InP QDs was controlled by varying the reaction parameters such as the reaction time and temperature, and the type of In precursors. This way, the photoluminescence properties of the synthesized InP@ZnS QDs could be easily tuned across the entire visible range, while their quantum yield could be increased up to 60% via the optimization of reaction conditions. Furthermore, possible reaction pathways for the formation of InP QDs using the P4 precursor have been investigated with nuclear magnetic resonance spectroscopy and it was demonstrated that the direct reaction of P4 precursor with In precursor produces InP structures without the formation of intermediate species. The large-scale production of InP@ZnS QDs was demonstrated by yielding more than 6 g of QDs per onebatch reaction.In the case of InP using different precursor P except the Tris(Trimethylsilyl) phosphine ((TMS)3P) there has been a problem that the size distribution is poor. Two kinds of P precursors with different reactivities were used to separate the nucleation and growth processes and to induce growth along the Lamer mechanism to produce uniform particles. For this, (TMS)3P and DEAP were used as fast reacting P precursors, and P4 was used as a slow reacting P precursor. Through this, the possibility of uniform particle formation was observed. I strongly believe that the newly developed approach bears the potential to be widely used for manufacturing inexpensive high-quality QD emitters. Blank page Contents

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“…目前, 制备 InP 量子点也普遍采用这种方法, 将常温磷前体快速注射到高温铟前体溶液中, 使其成核并生长. 此方法一次性注入大量活性极高的磷前体, 根据经典成核理论, 前体的浓度越高, 形成的晶种越多, 导致最终合成的量子点的平均粒径越小 [8] . 因此, 采用此方法一般难以合成大尺寸、发射光谱范围达到近红外区的 InP 量子点.…”

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Synthesis of InPZnS/ZnS Quantum Dots by Continuous Injection of Phosphorus Precursor

Huang¹,

Li²,

Huang³

et al. 2017

Acta Chim. Sinica

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InP quantum dots (QDs) are regarded as the most desirable candidate to replace the role of CdSe QDs in the applications of bio-labeling, LEDs, solar cells, etc, because InP is more environmentally friendly compared to Cd based QDs, and could also offer a tunable emission from blue to near-infrared. Nevertheless, the studies and applications of InP QDs are rather sparse in comparison with CdSe QDs, which are principally caused by significant difficulties in its synthesis. In this report, we developed a novel method for the synthesis of InPZnS/ZnS QDs by using zinc phosphide as phosphorus precursor, and the zinc and sulfur precursors were also added at the start of reaction, which allows the continuous injection of phosphine gas into the reaction, resulting in high quality InPZnS/ZnS quantum dots with emission up to 680 nm. The core synthesis and shell coating were separated by controlling the reaction temperature. During the first 30 minutes, the temperature of reaction solution was kept at 250 ℃ to grow the InPZnS core QDs. Then, the coating of ZnS shell was happened and kept about 1 hour to guarantee the complete decomposition of 1-dodecanethiol (DDT) after the reaction temperature was increased to 300 ℃. The biggest advantage of this synthetic method is the tunable emission region from blue to near-infrared. The effects of reaction parameters were systematically investigated. We observed that the molar ratio of In: myristic acid (MA) and that of In: Zn (S) had significant influences on the size of the InP QDs. The structure of InPZnS/ZnS QDs was confirmed by transmission electron microscope (TEM), X-ray powder diffraction (XRD), and energy dispersive X-ray analyzer (EDX). TEM characterization indicated the final core/shell InPZnS/ZnS QDs were good monodispersity with an average size of 7 nm. Furthermore, we investigated the versatility of this method by using other phosphorus precursor. The injection pump leaded to a continuous supply of phosphorus precursor on a timescale and reacted with indium precursor to form InP QDs . The final sample showed an emission at 710 nm. The present method gives access to larger sized InP QDs, making it prosperous for applications in biological labeling.

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Chemistry of InP Nanocrystal Syntheses

Cited by 328 publications

References 132 publications

Flexible quantum dot light-emitting diodes for next-generation displays

Flexible quantum dot light-emitting diodes for next-generation displays

Large-Scale Synthesis of Highly Luminescent InP@ZnS Quantum Dots Using Elemental Phosphorus Precursor

Synthesis of InPZnS/ZnS Quantum Dots by Continuous Injection of Phosphorus Precursor

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