Abstract:The early transition metals Ruthenium (Ru) and Cobalt (Co) are of high interest as alternative materials for replacing Cu in next generation interconnects. Plasma-enhanced atomic layer deposition (PE-ALD) is used to deposit metal thin films in high-aspect ratio structures of vias and trenches in nanoelectronic devices. At the initial stages, the surface reactions between metal precursors and substrate and corresponding chemistries are vital to understand the reaction mechanism and deposition process. But, the … Show more
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