Chemisorption of Ba on deuterium-terminated Si(100) surface

Aspects of Barium Contamination in High Dielectric Dynamic Random Access Memories

“…5 The interaction of Ba overlayers with Si(100) 2 ϫ 1 surfaces has been intensively studied in recent years. [6][7][8][9][10][11][12][13][14][15] Fan and Ignatiev 8 reported different adsorption structures, depending on Ba coverage for temperatures above 700ЊC, and presumed that at low coverage [<1 monolayer (ML)], Ba does not diffuse into the Si(100) surface even at high temperatures of 1000ЊC [The coverage of 1 ML is referred to the number of Si atoms on an ideal unreconstructed Si(100) surface with the atomic density 6.8 ϫ 10 14 atoms/cm 2 .] Hongo et al 16 reported that no silicide formation takes place by heating up to 800ЊC in the case of submonolayer Ba on Si(100) and that silicide is formed very easily by heating up to 250ЊC for 2 ML Ba on Si(100).…”