1975
DOI: 10.1002/chin.197514022
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ChemInform Abstract: ZUSTANDSDIAGRAMM DES SYSTEMS PR‐GE

Abstract: Im′ Zustandsdiagramm des Systems Pr‐Ge werden durch DTA, Röntgenbeugungs‐ und Gefügeuntersuchungen die Phasen (I)‐(VII) nachgewiesen.

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Cited by 5 publications
(10 citation statements)
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“…The inconsistencies in determination of the crystal structure in early publications appeared to have a simple explanation. With further studies of the Ce -Ge binary phase diagram it was realized that CeGe 2 is not a stoichiometric, line, compound, but has a depleted structure with a width of formation, CeGe 2−x with 0.36 ≤ x ≤ 0.43, or larger (see below) [9,10,11,12,13,14] A transition from high temperature, tetragonal, α-ThSi 2 type structure to low temperature, orthorhombic, α-GdSi 2 type was reported at temperatures between 560 • C (x = 0.36) and 490 • C (x = 0.43). [9,10,11] Within the range of Ge concentrations between 1.71 and 2.0 the orthorhombic crystal structure, and two magnetic transitions, with T N ≈ 7 K and T C ≈ 4.3 K, virtually independent on Ge concentration, were reported.…”
Section: Introductionmentioning
confidence: 99%
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“…The inconsistencies in determination of the crystal structure in early publications appeared to have a simple explanation. With further studies of the Ce -Ge binary phase diagram it was realized that CeGe 2 is not a stoichiometric, line, compound, but has a depleted structure with a width of formation, CeGe 2−x with 0.36 ≤ x ≤ 0.43, or larger (see below) [9,10,11,12,13,14] A transition from high temperature, tetragonal, α-ThSi 2 type structure to low temperature, orthorhombic, α-GdSi 2 type was reported at temperatures between 560 • C (x = 0.36) and 490 • C (x = 0.43). [9,10,11] Within the range of Ge concentrations between 1.71 and 2.0 the orthorhombic crystal structure, and two magnetic transitions, with T N ≈ 7 K and T C ≈ 4.3 K, virtually independent on Ge concentration, were reported.…”
Section: Introductionmentioning
confidence: 99%
“…With further studies of the Ce -Ge binary phase diagram it was realized that CeGe 2 is not a stoichiometric, line, compound, but has a depleted structure with a width of formation, CeGe 2−x with 0.36 ≤ x ≤ 0.43, or larger (see below) [9,10,11,12,13,14] A transition from high temperature, tetragonal, α-ThSi 2 type structure to low temperature, orthorhombic, α-GdSi 2 type was reported at temperatures between 560 • C (x = 0.36) and 490 • C (x = 0.43). [9,10,11] Within the range of Ge concentrations between 1.71 and 2.0 the orthorhombic crystal structure, and two magnetic transitions, with T N ≈ 7 K and T C ≈ 4.3 K, virtually independent on Ge concentration, were reported. [15] For lower Ge concentrations, between CeGe 1.66 and CeGe 1.71 , a tetragonal crystal structure and a single, antiferromagnetic, transition with T N ≈ 7 K (and no other magnetic transition down to 0.5 K) were observed.…”
Section: Introductionmentioning
confidence: 99%
“…Only a limited amount of well-established experimented data exist for the R 5 (Si x Ge 1-x ) 4 phases for R = Pr, Ho, Er, Tm, and Y; these includes phase diagrams, and magnetic, electronic, and thermodynamic properties. [46][47][48][49][50][51][52][53][54][55][56][57].…”
Section: Previous Work On R 5 (Si X Ge 1-x ) 4 Where R Is Rare Eartmentioning
confidence: 99%
“…For all of these reasons, CeGe 2−x has been the subject of many structural and magnetic investigations over the past five decades. [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16] The RGe 2−x compounds form over a range of Ge concentrations (x ≈ 0 to 0.4). Samples with x > 0.3 crystallize in the tetragonal ThSi 2 -type structure (space group I4 1 /amd) whereas samples with higher Ge content (x < 0.3) crystallize in the orthorhombic GdSi 2 -type structure (space group Imma) shown in Fig.…”
Section: Introductionmentioning
confidence: 99%