ChemInform Abstract: X‐RAY PHOTOELECTRON SPECTROSCOPIC STUDIES OF RUTHENIUM DIOXIDE‐BASED FILM ELECTRODES

Augustyński, Jan; Balsenc, L.; Hinden, J.

doi:10.1002/chin.197842024

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“…In Ru-implanted titanium electrodes, the Ru atoms are homogeneously distributed in planes normal to the ion beam (i.e., parallel to the electrode surface) in what is equivalent to a Ru-Ti solid solution (1). However, Augustynski et al have shown by means of x-ray photoelectron spectroscopy that Ru(VI) is present in the near-surface region of conventionally prepared RuO2 and DSA electrodes (58). This conclusion is confirmed below.…”

Section: Polarization Characteristics Of Unimplanted Andmentioning

confidence: 63%

Application of Ion Implantation to the Study of Electrocatalysis: I . Chlorine Evolution at Ru‐Implanted Titanium Electrodes

Kelly

Heatherly

Vallet

et al. 1987

J. Electrochem. Soc.

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Ru-implanted titanium near-surface alloys were generated by ion implantation, characterized (Ru concentration/ depth profiles) by Rutherford backscattering, and subsequently anodically oxidized to form electrocatalytically active RuxTil_xOJTi electrodes. The electrochemical behavior of the metallic-like electrodes was investigated in acidic chloride, perchlorate, and sulfate media. A correlation between the rate of the C12 evolution reaction and the Ru-implant profiles established that the reaction is first order in the concentration of Ru(IV) in the oxide at the oxide/solution interface, and enabled an in situ evaluation of the latter quantity. The Tafel slope for the C12 evolution reaction is 40 mV, i.e., o E/O log i = 2.303 (2RT/3F). The reaction order with respect to chloride ion concentration, 0 log i/0 log [C1-], approaches 1.0 and 2.0 at high and low chloride Concentrations, respectively. A modified Volmer-Heyrovsky mechanism, one in which the role of adsorbed chloride ions is taken into account, is shown to be consistent with the aforementioned diagnostic parameters.ion implantation, a nonequilibrium doping technique, enables the controlled introduction of virtually any element into the near-surface region of any substrate, typically to a depth up to a few hundred nanometers. The concentration/depth profile of the implanted species (determined, for example, by Rutherford backscattering) *Electrochemical Society Active Member. may be tailored over a wide range by varying the energy of the incident ions and the number of ions (coulombs of charge) implanted at each energy. As a surface modification technique, ion implantation has found widespread application for improving the electronic, optical, tribological, and corrosion characteristics of materials (1-4). The rates of many technologically important electrochemical charge transfer reactions occurring at elec-) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 128.255.6.125 Downloaded on 2015-06-03 to IP

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Section: Polarization Characteristics Of Unimplanted Andmentioning

confidence: 63%